中国激光, 1994, 21 (2): 126, 网络出版: 2007-08-17
制备可见光致发光硅量子阱的激光晶化技术
Laser Crystallization Technique for Fablication of Visible Luminecent Silicon Quantum-well
摘要
我们利用Ar+激光辐照a-Si:H/a-SiNx:H多量子阱结构材料,使a-Si:H阱层晶化。在该样品中成功地观察到室温可见光致发光现象,研究了阱层厚度和激光辐照功率对光致发光峰峰位及半高宽的影响。
Abstract
Visible-photoluminesce at room temperatur has been observed from a-Si:H/a-SiNx:H multi-quantum-well (MoW) structures crystallized by Ar+ laser annealing technique. We have also studeid the dependence of the photoluminescence ark positions and full width of half maximum (PWHM) on the thickness of well layers and the laser powers.
参考文献
黄信凡, 陈坤基, 徐骏. 制备可见光致发光硅量子阱的激光晶化技术[J]. 中国激光, 1994, 21(2): 126. 黄信凡, 陈坤基, 徐骏. Laser Crystallization Technique for Fablication of Visible Luminecent Silicon Quantum-well[J]. Chinese Journal of Lasers, 1994, 21(2): 126.
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