X射线衍射、X射线光电子能谱对PtSi薄膜形成机理的研究
[1] 陈道南,王戎瑞,等.高技术武器装备中光电子技术的作用及发展趋势[J].激光与红外,1999,29(2):64~71.
[2] . Fast eadiative processing of platinum silicide[J]. J.Appl.Phys., 1985, 57(2): 607-609.
[3] Morgan S J, Mooney J M, et al. An XPS study of thin Pt and Ir silicide overlayer formation on Si(100) surfaces[J]. Applied Surface Science, 1992, 56~58:493~500.
[4] . Fiohr and Schulz M. Infrared absorption in PtSi-Si interface states[J]. Appl. Phys. Lett., 1986, 48(22): 1534-1535.
[5] . Initial stages in the formation of PtSi on Si(111) as followed by photoemission and spectroscopic ellipsometry[J]. Thin Solid Films, 1995, 270: 561-566.
[6] . Thickness Dependence of the Properties and Thermal Stability of PtSi films[J]. Thin Solid Films, 1994, 253: 467-472.
[7] . A.Yunakov et al. Silicide formation in thin film Pt-Si(111) Structure by USXES data[J]. Thin Solid Films, 1997, 298: 135-137.
[8] 刘爽,宁永功,等.常规XRD对超薄PtSi/Si膜的表征技术研究[J].半导体光电,1999,20(4):285~288.
[9] 赵英译.硅化物及其在超大规模集成电路中的应用[M].天津:南开大学出版社,1987.
刘爽, 宁永功, 陈艾, 龙再川, 杨家德. X射线衍射、X射线光电子能谱对PtSi薄膜形成机理的研究[J]. 红外与激光工程, 2001, 30(1): 66. 刘爽, 宁永功, 陈艾, 龙再川, 杨家德. Study on the formation mechanism of PtSi film by X-ray diffraction and X-ray photo spectrum[J]. Infrared and Laser Engineering, 2001, 30(1): 66.