[1] T Ashley, C T Elliott. Non-equilibrium devices for infrared detection[J].Electron Lett, 1985, 21: 451-452.

[2] C Elliott. Non-equilibrium modes of operation of narrow-gap semiconductor devices[J]. Semicond. Sci. Technol, 1990, 5: S30-S37.

[3] P Martyniuk, A Rogalski. HOT infrared photodetectors[J]. Opto-Electron. Rev, 2013, 21: 240-258.

[4] S Maimon, G W Wicks. nBn detector, an infrared detector with reduced dark current and higher operating temperature[J]. Appl. Phys. Lett, 2006,

    89: 151109-1-151109-3.

[5] A M Itsuno, J D Phillips, S Velicu. Predicted Performance Improvement of Auger-Suppressed HgCdTe Photodiodes and p-n Heterojunction Detectors[J]. IEEE Trans. Electron Devices, 2011, 58: 501-507.

[6] A M Itsuno, J D Phillips, S Velicu. Mid-wave infrared HgCdTe nBn photodetector[J]. Appl. Phys. Lett, 2012, 100: 161102-1-161102-3.

[7] J Schuster, W E Tennant, E Bellotti, et al. Analysis of the Auger Recombination Rate in P+N.n.N.N HgCdTe Detectors for HOT Applications[C]//Proc. of SPIE, 2016, 9819: 98191F-1-98191F-10.

[8] M A Kinch, M J Brau, A Simmons. Recombination mechanisms in 8-14μm HgCdTe[J]. J. Appl. Phys, 1973, 44: 1649-1663.

[9] E M Azoff. Closed-from method for solving the steady-state generalised energy-momentum conservation equations[J]. The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1987, 6(1):25-30.

[10] F Bertazzi, M Moresco, M Penna, et al. Full-Band Monte Carlo Simulation of HgCdTe APDs[J]. J. Electron. Mater, 2010, 39(7): 912-917.

[11] F Bertazzi, M Goano, E Bellotti. Calculation of Auger Lifetimes in HgCdTe[J]. J. Electron. Mater, 2011, 40(8):1663-1667.

[12] Gerald C Holst, Ronald G Driggers. Small detectors in infrared system design[J]. Optical Engineering, 2012, 51: 096401-1-096401-10.

[13] Smith W J. Modern optical engineering[M]. Washington: SPIE PRESS, 2000: 192-195.

[14] Gerald C. Holst. Imaging system performance based upon Fλ/d[J]. Optical Engineering, 2007, 46: 103204-1- 103204- 8.

[15] Kinch M A. The rationale for ultra-small pitch IR systems[C]//Proc.

    SPIE, 2014, 9070: 907032-1-907032-14.

[16] Rodot M, Verie C, Marfaing Y, et al. Semiconductor lasers and fast detectors in the infrared (3 to15 microns)[J]. IEEE J. Quantum. Electron, 1966, 2(9): 586-593.

[17] 杨建荣. 碲镉汞材料物理与技术 [M].北京: 国防工业出版社 , 2012:107-109.

    YANG Jianrong. Physics and Technology of HgCdTe Materials[M]. Beijing: National Defense Industry Press, 2012: 107-109.

[18] Kinch M A. HDVIP. FPA technology at DRS[C]//Proc. SPIE, 2001, 4369: 802-814.

[19] Baker I M, Ballingall R A .Photovoltaic HgCdTe hybrid focal planes[C]//Proc. SPIE, 1984, 510: 121-130.

[20] Baker I M, Crimes G J, Parsons J E, et al. CdHgTe-CMOS hybrid focal plane arrays-a flexible solution for advanced infrared systems[C]//Proc. SPIE, 1994, 2269: 636-647.

[21] R Breitera, D Eicha, H Figgemeiera, et al. Small pixel pitch MCT IR-modules[C]//Proc. of SPIE, 2016, 9819: 98191Y-1-98191Y-18.

[22] Armstrong J M, Skokan M R, Kinch M A, et al. HDVIP five micron pitch HgCdTe focal plane array[C]//Proc. SPIE, 2014, 9070: 907033-1-907033-7.

[23] Nicolas Péré-Lapernea, Laurent Rubaldoa, Alexandre Kerlain, et al. 10μm pitch design of HgCdTe diode array in Sofradir[C]//Proc. SPIE, 2015, 9370: 937022-1-937022-10.

[24] Nicolas Péré-Laperne, Jocelyn Berthoz, Rachid Taalat, et al. Latest developments of 10μm pitch HgCdTe diode array from the legacy to the extrinsic technology[C]//Proc. SPIE, 2016, 9819: 981920-1-981920-13.

[25] Yann Reibel, Nicolas Péré-Laperne, Laurent Rubaldo, et al. Update on 10μm pixel pitch MCT-based focal plane array with enhanced functionalities[C]//Proc. SPIE, 2015, 9451: 94512E-1-94512E-15.

[26] R Kennedy McEwen, David Jeckells, Sudesh Bains, et al. Developments in Reduced Pixel Geometries with MOVPE Grown MCT Arrays[C]//Proc. SPIE, 2015, 9451: 94512D-1-94512D-9.

[27] Tennanat W E,D J Gulbransen, A Roll, et al. Small-pitch HgCdTe photodetectors[J]. J. Electron. Mater, 2014, 43: 3041-3046.