为研究晶体硅太阳电池在标准模拟光条件下的输出特性变化规律和电池内部载流子输运特性, 采用原位光老化技术对被测电池进行光照处理, 按标准测试实验流程测量电池的伏安特性及光谱响应等参量, 发现原位光老化后太阳电池伏安特性各项参量衰减, 导致电池效率降低; 短波段光谱响应微量下降, 是由于原位光老化过程中电池表面产生极微量的面缺陷导致经过硅表面的微量载流子被复合; 而长波段响应明显降低, 是由于晶硅内大量体缺陷被激活导致长波载流子在经过硅材料内部时被复合.随后将光老化后电池退火并测量比对电池各项特性参量, 结果表明, 退火对光老化后电池内部深层体缺陷具有较好的修复功能, 但对浅层面缺陷没有修复功能, 最终造成电池伏安特性参量和光谱响应只得到部分恢复.

In order to investigate the output variation of the silicon solar cell under the solar simulator and its internal carrier transport properties, light soaking in situ of crystalline silicon solar cell technology was conducted before the standard test which measures the cell's current-voltage characteristics, spectral response and other parameters. The results show that the attenuation of current-voltage characteristics results in reduced efficiency. The short wavelength spectral response of solar cell is decreased slightly after light soaking in situ. The reason is that the surface of the cell generates a very small amount of defect during the light soaking process whichleads to slight decrease of the carrier recombination. The significant decrease of the spectral response during the long wavelength is due to a large number of the bulk defects being activated, which results in the long-wave carrier recombination when it passes through the silicon.The solar cell was then annealed and tested after light soaking. The results show that annealing has a good effect on the recovery of bulk defect deep inside the cell. There is a partial recovery of bulk defects after annealing while the surface defects are not recovered, which leads to the incomplete recovery of current-voltage characteristics and spectral response.