晶硅太阳电池原位光老化及热致输运机理
[1] 孙皓. 太阳电池及相关测试设备的计量方法研究[D]. 杭州:中国计量科学研究院, 2010.
SUN Hao. Research on calibration methods of solar cells and related testing equipments[D]. Hangzhou: National Institute of Metrology, 2010.
[2] 周健, 李红飞, 刘毓成,等. 基于改进型双二级管模型的户外模组电量预测技术研究[J]. 光子学报, 2013, 42(9): 1077-1082.
[3] SCHMIDT J, HEZEL R. Light-induced degradation in CZ silicon solar cells: fundamental understanding and strategies for its avoidance[C]. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Breckenridge: 2002.
[4] 李秀杰, 韩培德, 杨毅彪,等. 基于光子晶体异质结的高效太阳能电池反射器研究[J]. 光子学报, 2010, 39(10): 1786-1789.
[5] FISCHER H, PSCHUNDER W. Investigation of photon and thermal induced changes in silicon solar cells[C]. Proceedings of the 10th IEEE PVSC, New York, 1973: 404-411.
[6] SCHMIDT J, CUEVAS A, REIN S, et al. Impact of light-induced recombination centres on the current-voltage characteristic of Czochralski silicon solar cells[J]. Progress in Photovoltaics Research and Applications, 2001, 9(4): 249-255.
[7] SCHUTZ-KUCHLY T, DUBOIS S, VEIRMAN J,et al. Light-induced degradation in compensated n-type Czochralski silicon solar cells[J]. Physica Status Solidi, 2011, 208(3): 572-575.
[8] BOTHE K, SCHMIDT J, HEZEL R. Effective reduction of the metastable defect concentration in boron-doped Czochralski silicon for solar cells[C]. Photovoltaic Specialists Conference Record of the 29th IEEE, 2002: 194-197.
[9] BASNYAT P, SOPORI B, DEVAYAJANAM S, et al. Experimental study to separate surface and bulk contributions of light-induced degradation in crystalline silicon solar cells[J]. Emerging Materials Research, 2015, 4(2): 239-246.
[10] VORONKOV V, FALSTER R. Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon-based solar cells[J]. Journal of Applied Physics, 2010, 107(5): 053509.
[11] 任驹, 郭文阁, 郑建邦. 基于P-N结的太阳能电池伏安特性的分析与模拟[J]. 光子学报, 2006, 35(2): 171-175.
[12] GREEN M A. Silicon solar cells: advanced principles &practice[M]. Sydney, N.S.W., Australia: Centre for Photovoltaic Devices and Systems, 1995.
[13] SOPORI B, BASNYAT P, DEVAYAJANAM S, et al. Understanding light-induced degradation of c-Si solar cells[C]. Photovoltaic Specialists Conference Record of the 38th IEEE, 2012.
[14] 彭小静, 徐林, 刘锋,等. 光谱及太阳电池各参量与填充因子之关系[J]. 太阳能学报, 2009, 30(7): 878-882.
PENG Xiao-jing, XU Lin, LIU Feng, et al. Study the effects of spectrum and solar cell parameter on fill factor[J]. Acta Energiae Solaris Sinica, 2009, 30(7): 878-882.
[15] LIM B, ROUGIEUX F, MACDONALD D, et al. Generation and annihilation of boron-oxygen-related recombination centers in compensated p-and n-type silicon[J]. Journal of Applied Physics, 2010, 108(10): 103722-103722-9.
[16] MEEMONGKOLKIAT V. Development of high efficiency monocrystalline Si solar cells through improved optical and electrical confinement[J]. Dissertations & Theses -Gradworks, 2008.
[17] 周健, 卞洁玉, 李红飞,等. 晶体硅光伏电池的标准测试[J]. 光学精密工程, 2014, 22(6): 1517-1523.
[18] 熊绍珍. 太阳能电池基础与应用[M]. 北京: 科学出版社, 2009: 105-106.
[19] LAN D, GREEN M A. Extended spectral response analysis of conventional and front surface field solar cells[J]. Solar Energy Materials & Solar Cells, 2015, 134(134): 346-350.
[20] SAAD M, KASSIS A. Effect of interface recombination on solar cell parameters[J]. Solar Energy Materials & Solar Cells, 2003, 79(4): 507-517.
叶金晶, 周健, 卞洁玉, 孙谦晨. 晶硅太阳电池原位光老化及热致输运机理[J]. 光子学报, 2016, 45(9): 0912004. YE Jin-jing, ZHOU Jian, BIAN Jie-yu, SUN Qian-chen. Light Soaking in Situ and Thermally Induced Transport Mechanism of Crystalline Silicon Solar Cell[J]. ACTA PHOTONICA SINICA, 2016, 45(9): 0912004.