Ce3+/Eu2+共掺Ca3Si2O4N2荧光粉的光学特性

采用高温固相法制备了一种新型的白光LED用Ca3Si2O4N2∶Eu2+, Ce3+, K+ 荧光粉。利用X射线衍射仪对样品的物相结构进行了分析, 结果表明:Ce3+和 K+离子的掺杂没有改变 Ca3Si2O4N2∶Eu2+荧光粉的主晶相。利用荧光光谱仪对样品的发光性能进行了测试, 发现样品在355 nm激发下得到的发射光谱为峰值位于505 nm的单峰, 是 Eu2+离子5d-4f 电子跃迁引起的。Ca3Si2O4N2∶Eu2+荧光粉通过Ce3+和 K+离子的掺杂, 发光明显增强。当Ce3+的摩尔分数为1%时, 荧光粉的发光强度达到最大值, 是单掺Eu2+离子荧光粉发光强度的168%。通过光谱重叠的方法计算Ce3+→Eu2+能量传递临界的距离为2.535 nm。

Abstract

A novel Ce3+/Eu2+ co-activated Ca3Si2O4N2 phosphor was synthesized by traditional solid-state reaction. The phosphors were characterized by X-ray diffraciton (XRD) and fluorescence spectrophotometer (PL). XRD patterns reveal that the samples maintain Ca3Si2O4N2 single phase after doping Ce3+ and K+ ions. The emission spectra under 355 nm excitation show the typical broad band of Eu2+ peaking at about 505 nm (5d-4f). The emission could be greatly enhanced through doping Ce3+ and K+ in Ca3Si2O4N2∶Eu2+ phosphors. K+ ions could be used as charge compensation in Ca3Si2O4N2∶Eu2+,Ce3+ phosphors. When the mole fractions of Ce3+ and K+ are 1%, the emission intensity reach the maximum, which is about 168% of that of the sample without doping Ce3+ or K+. And the critical distance is calculated to be about 2.535 nm by the spectra overlap method.

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陈鸿, 李晨霞, 华有杰, 徐时清. Ce³⁺/Eu²⁺共掺Ca₃Si₂O₄N₂荧光粉的光学特性[J]. 发光学报, 2013, 34(10): 1324. CHEN Hong, LI Chen-xia, HUA You-jie, XU Shi-qing. Photoluminescence Properties of Ce³⁺/Eu²⁺ Co-doped Ca₃Si₂O₄N₂ Phosphors[J]. Chinese Journal of Luminescence, 2013, 34(10): 1324.

Ce³⁺/Eu²⁺共掺Ca₃Si₂O₄N₂荧光粉的光学特性

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