中国光学, 2020, 13 (3): 577, 网络出版: 2020-08-17
用于超短脉冲CO2激光的半导体光开关理论建模与数值分析 
下载： 560次
Modeling and numerical simulation of a semiconductor switching device applied in an ultra-short pulse CO2 laser
图 & 表
图 1. (a)反射光开关(b)透射光开关示意图
Fig. 1. Schematic diagrams of (a) reflection switch (b) transmission switch.
图 2. 脉宽为20 ps，能量密度为0.6 mJ/cm2，波长为1.06 μm控制光脉冲辐照下半导体表面等离子体密度随时间变化曲线
Fig. 2. Surface density of plasma in germanium plotted as a function of time under the radiation of 1.06-μm control pulse with pulse width of 20 ps and energy density of 0.6 mJ/cm2.
图 3. 控制光消失后表面等离子体密度随时间变化曲线
Fig. 3. Surface density of plasma in germanium plotted as a function of time after the control pulse vanishing
图 4. CO2光脉冲垂直入射反射光开关输出脉冲能量变化曲线
Fig. 4. Calculated vertical reflected pulse energy plotted as a function of time
图 5. CO2光脉冲以布鲁斯特角入射反射光开关输出脉冲能量变化
Fig. 5. Calculated Brewster′s angle reflected pulse energy plotted as a function of time
图 7. 单级半导体反射开关表面等离子体密度随时间变化曲线
Fig. 7. Surface density of plasma in single-stage semiconductor switching plotted as a function of time
图 8. 两级半导体光开关在5、10、15、20 ps延迟时间下输出CO2脉冲能量
Fig. 8. CO2 pulse energy outputs from two-stage semiconductor switching with time delay of 5, 10, 15 and 20 ps
图 9. 脉宽为6、10、30、60 ps的控制光脉冲辐照单级反射开关得到CO2脉冲能量
Fig. 9. CO2 pulse energies obtained by using controlled light pulse with pulse widths of 6, 10, 30, 60 ps to radiate single–stage reflection switch
高月娟, 陈飞, 潘其坤, 俞航航, 李红超, 田有朋. 用于超短脉冲CO2激光的半导体光开关理论建模与数值分析[J]. 中国光学, 2020, 13(3): 577. Yue-juan GAO, Fei CHEN, Qi-kun PAN, Hang-hang YU, Hong-chao LI, You-peng TIAN. Modeling and numerical simulation of a semiconductor switching device applied in an ultra-short pulse CO2 laser[J]. Chinese Optics, 2020, 13(3): 577.
PDF全文
