光谱学与光谱分析, 2013, 33 (11): 2907, 网络出版: 2013-11-14  

白光LED用硅氮基荧光粉材料研究进展

Progress in the Research on Silicon-Nitrogen Based Phosphor for White LED
作者单位
中国计量学院光学与电子科技学院, 浙江 杭州310018
摘要
随着白光LED技术的迅速发展, 传统YAG∶Ce3+荧光粉由于低显色性、 高色温等因素制约而难以满足发展需求。 利用近紫外芯片激发三基色荧光粉成为获得白光LED的一种有效途径, 因而发展高性能三基色荧光粉具有重要意义, 尤其红光发光材料更是当务之急。 硅氮基化合物包含由SiN4四面体构成的网络结构, 具有很高的化学稳定性和热稳定性。 该类荧光粉因其结构的多样性, 且在紫外-蓝光区具有高的吸收效率, 因而随着基质和激活离子的改变, 发射光谱可覆盖整个可见光区域, 并具有较高的光转换效率和光色稳定性, 对温度和驱动电流的变化不敏感等优点, 因而此类研究对白光LED的发展具有深远的影响。 综述了近年来硅氮基荧光粉制备方法及研究的最新进展, 系统地归纳总结了硅氮基荧光粉的晶体结构及发光性能等特性, 并分析了目前国际上对该材料的研究动态及应用情况。
Abstract
With the rapid development of white LED technology, the traditional YAG∶Ce3+ phosphor is difficult to meet the requirement due to the low color rendering and high color temperature. Using ultraviolet chip to stimulate the tri-phosphor has become an effective way for white LED, and it is urgent to develop novel tri-phosphor with high-performance, especially for red light-emitting materials. Silicon-nitrogen based compounds contain the network structure composed of SiN4 tetrahedron, with higher chemical and thermal stability. Because of their diversity structures, these phosphors have a higher absorption efficiency in UV-blue region, and also, with the change of substrate and active ion, emission spectrum will cover the entire visible region, resulting in a higher light conversion efficiency and light color stability, coupled with the advantages of being not sensitive to the changes in temperature and drive current, etc. These studies will have a far-reaching impact on the development of white LED. In the present paper, we introduce the preparation and latest progress of silicon-nitrogen based phosphor, including the crystal structure, spectroscopic properties and application characteristics.
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徐国堂, 梁培, 王乐, 董前民, 刘阳, 李晓艳. 白光LED用硅氮基荧光粉材料研究进展[J]. 光谱学与光谱分析, 2013, 33(11): 2907. XU Guo-tang, LIANG Pei, WANG Le, DONG Qian-min, LIU Yang, LI Xiao-yan. Progress in the Research on Silicon-Nitrogen Based Phosphor for White LED[J]. Spectroscopy and Spectral Analysis, 2013, 33(11): 2907.

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