短脉冲激光对硅基探测器的热作用模型选择

郝向南; 聂劲松; 李化; 卞进田

doi:doi:10.3788/hplpb20122402.0285

强激光与粒子束, 2012, 24 (2): 285, 网络出版: 2012-05-08

短脉冲激光对硅基探测器的热作用模型选择

Selection of heat transfer model for describing short-pulse laser heating silica-based sensor

论文大纲

郝向南 ^*聂劲松李化卞进田

作者单位

解放军电子工程学院脉冲功率激光技术国家重点实验室，合肥 230037

摘要

从傅里叶模型和非傅里叶模型的基本方程出发，通过有限差分方法对方程进行数值求解。分别分析了10, 1.0, 0.1, 0.01 ns这4种脉宽的脉冲激光作用于硅材料时两种传热模型温度曲线的相对变化；讨论了热弛豫时间对非傅里叶模型数值结果的影响。结果表明：脉宽小于或等于100 ps的激光作用于硅材料时，表层温度上升缓慢，会发生载流子效应，非傅里叶模型可以合理地反映这种现象；对于一般材料，载流子效应发生的条件是脉宽小于或等于材料热弛豫时间，此时应当用非傅里叶模型描述加热过程。

Abstract

The fundamental equations of Fourier heat transfer model and non-Fourier heat transfer model were numerically solved, with the finite difference method. The relative changes between temperature curves of the two heat transfer models were analyzed under laser irradiation with different pulse widths of 10 ns, 1 ns, 100 ps, 10 ps. The impact of different thermal relaxation time on non-Fourier model results was discussed. For pulses of pulse width less than or equal to 100 ps irradiating silicon material, the surface temperature increases slowly and carrier effect happens, which the non-Fourier model can reflect properly. As for general material, when the pulse width is less than or equal to the thermal relaxation time of material, carrier effect occurs. In this case, the non-Fourier model should be used.

参考文献

[1] 赵镇南.传热学［M］.北京:高等教育出版社，2002.(Zhao Zhennan. Heat transfer.Beijing: Higher Education Press, 2002)

[2] 刘静.微米/纳米尺度传热学［M］.北京:科学出版社,2001.(Liu Jing. Heat transfer in micron/nanometer scale. Beijing: Science Press, 2001)

[3] 王秋军,徐红玉,宋亚勤,等.微尺度热传导理论及金属薄膜的短脉冲激光加热［J］.微纳电子技术, 2003, 40(11): 18-23.(Wang Qiujun, Xu Hongyu, Song Yaqin, et al. Theory of microscale heat transfer and short-pulse laser heating of thin metal films. Micronanoelectronic Technology, 2003, 40(11): 18-23)

[4] 蒋方明,刘登瀛.非傅里叶导热现象的双元相滞后模型剖析［J］.上海理工大学学报, 2001, 23(3): 197-200.(Jiang Fangming, Liu Dengying. Thorough study on non-Fourier heat conduction with DPL model. Journal of University of Shanghai for Science and Technology, 2001, 23(3): 197-200)

[5] 黄海明,孙岳.脉冲强激光辐照下材料响应的非傅里叶效应［J］.强激光与粒子束,2009,21(6): 808-811.(Huang Haiming, Sun Yue. Non-Fourier response of target irradiated by multi-pulse high power laser.High Power Laser and Particle Beams, 2009,21(6): 808-811)

[6] 余宁,潘健生,顾剑锋,等.瞬态非傅里叶导热效应判据的探讨［J］.激光技术, 2002, 26(2): 156-158.(Yu Ning, Pan Jiansheng, Gu Jianfeng, et al. Transient criterion of non-Fourier heat conduction law. Laser Technology, 2002,26(2): 156-158)

[7] 崔晓鸣,刘登瀛,淮秀兰.高能脉冲激光作用下材料表面温度场［J］.北京科技大学学报,2000,22(5):470-474.(Cui Xiaoming, Liu Dengying, Huai Xiulan. Temperature fields on material surface under high energy pulse laser irridiation. Journal of Universitiy of Science and Technology Beijing, 2000, 22(5): 470-474)

[8] 张锁春.抛物线方程定解问题的有限差分数值计算［M］.北京:科学出版社,2010.(Zhang Suochun. Definite solution of parabolic equation with finite difference numeric method. Beijing: Science Press, 2010)

[9] 沈中华,陆建,倪晓武.皮秒和纳秒脉冲激光作用于半导体材料的加热机理研究［J］.中国激光,1999,26(9): 859-863.(Shen Zhonghua, LuJian, Ni Xiaowu. Study of the heating mechanism of a semiconductor irradiated by picosecond and nanosecond laser pulses.Chinese Journal of Lasers,1999,26(9):859-863)

[10] 张浙,刘登瀛.非傅里叶热传导研究进展［J］.力学进展,2000,30(3):446-456.(Zhang Zhe, Liu Dengying. Advances in the study of non-Fourier heat conduction.Advances in Mechanics,2000,30(3):446-456)

郝向南, 聂劲松, 李化, 卞进田. 短脉冲激光对硅基探测器的热作用模型选择[J]. 强激光与粒子束, 2012, 24(2): 285. Hao Xiangnan, Nie Jinsong, Li Hua, Bian Jintian. Selection of heat transfer model for describing short-pulse laser heating silica-based sensor[J]. High Power Laser and Particle Beams, 2012, 24(2): 285.

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