高功率半导体激光器阵列微通道热沉的温度

微通道热沉是解决高功率半导体激光器阵列散热有效的途径,本文利用有限元方法研究半导体激光器的温度,给出了横向尺寸为200 μm×60 μm 单个及间距100 μm 的3,5,9 的微通道热沉中的温度,得到微通道数量影响激光器最高温度变化。结果表明,单个微通道构成的热沉可以把注入电流为36 A 稳态工作的激光器阵列冷却到342 K,9 个微通道可以冷却到306 K。仿真了增加微通道间距的温度分布,发现为间距260 μm 的5 个微通道热沉,可以将激光器冷却到308 K。

Abstract

The micro-channel heat sink is an effective way to solve the heat removal problem in high power semiconductor laser array. The temperature in a high power semiconductor laser is analyzed by the finite element method. The temperature is obtained in a single and 3, 5, 9 micro-channels heat sinks with the space of 100 μm and transverse size 200μm×60μm. The effect of number of micro-channels on maximum temperature is presented. The result shows that the temperature in the semiconductor lasers in 36 A injected current stable operation can be cooled down to 306 K by the heat sink made up of 9 micro-channels, while the temperature is dropped to 342 K for a single micro-channel. The temperature distribution is also simulated with increasing the space between micro-channels. It is found that the temperature can be dropped to 308 K by 5 micro-channels with the space of 260 μm.

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孙梅, 苏周, 王景芹, 赵红东. 高功率半导体激光器阵列微通道热沉的温度[J]. 光电工程, 2010, 37(1): 106. 孙梅, 苏周, 王景芹, 赵红东. Temperature in Micro-channel Heat Sink of High Power Semiconductor Laser Array[J]. Opto-Electronic Engineering, 2010, 37(1): 106.

高功率半导体激光器阵列微通道热沉的温度

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