红外技术, 2013, 35 (6): 364, 网络出版: 2013-08-01
基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系
The Relations between Hall Voltage and Carrier Concentration of Two Kinds of Carrier Conduction System for HgCdTe
引用该论文
彭曼泽, 李东升, 李秋妍, 田立萍, 吴刚. 基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系[J]. 红外技术, 2013, 35(6): 364.
PENG Man-ze, LI Dong-sheng, LI Qiu-yan, TIAN Li-ping, WU Gang. The Relations between Hall Voltage and Carrier Concentration of Two Kinds of Carrier Conduction System for HgCdTe[J]. Infrared Technology, 2013, 35(6): 364.
彭曼泽, 李东升, 李秋妍, 田立萍, 吴刚. 基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系[J]. 红外技术, 2013, 35(6): 364. PENG Man-ze, LI Dong-sheng, LI Qiu-yan, TIAN Li-ping, WU Gang. The Relations between Hall Voltage and Carrier Concentration of Two Kinds of Carrier Conduction System for HgCdTe[J]. Infrared Technology, 2013, 35(6): 364.