基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系

彭曼泽; 李东升; 李秋妍; 田立萍; 吴刚

红外技术, 2013, 35 (6): 364, 网络出版: 2013-08-01

基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系

The Relations between Hall Voltage and Carrier Concentration of Two Kinds of Carrier Conduction System for HgCdTe

彭曼泽 ^*李东升李秋妍田立萍吴刚

作者单位

昆明物理研究所，云南昆明 650223

图 & 表

彭曼泽, 李东升, 李秋妍, 田立萍, 吴刚. 基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系[J]. 红外技术, 2013, 35(6): 364. PENG Man-ze, LI Dong-sheng, LI Qiu-yan, TIAN Li-ping, WU Gang. The Relations between Hall Voltage and Carrier Concentration of Two Kinds of Carrier Conduction System for HgCdTe[J]. Infrared Technology, 2013, 35(6): 364.