红外技术, 2013, 35 (6): 364, 网络出版: 2013-08-01
基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系
The Relations between Hall Voltage and Carrier Concentration of Two Kinds of Carrier Conduction System for HgCdTe
基本信息
DOI: | -- |
中图分类号: | TN215 |
栏目: | 材料与器件 |
项目基金: | -- |
收稿日期: | 2013-02-28 |
修改稿日期: | 2013-05-10 |
网络出版日期: | 2013-08-01 |
通讯作者: | 彭曼泽 (pengmanze@126.com) |
备注: | -- |
彭曼泽, 李东升, 李秋妍, 田立萍, 吴刚. 基于二种载流子体系的HgCdTe材料的霍尔电压与载流子浓度关系[J]. 红外技术, 2013, 35(6): 364. PENG Man-ze, LI Dong-sheng, LI Qiu-yan, TIAN Li-ping, WU Gang. The Relations between Hall Voltage and Carrier Concentration of Two Kinds of Carrier Conduction System for HgCdTe[J]. Infrared Technology, 2013, 35(6): 364.