850nm Implant-confined VCSEL Temperature Characteristics
LI Lin, ZHONG Jing-chang, LIU Wen-li, ZHAO Ying-jie, ZHANG Yong-ming, SU Wei. 850nm Implant-confined VCSEL Temperature Characteristics[J]. 半导体光子学与技术, 2004, 10(1): 35.
LI Lin, ZHONG Jing-chang, LIU Wen-li, ZHAO Ying-jie, ZHANG Yong-ming, SU Wei. 850nm Implant-confined VCSEL Temperature Characteristics[J]. Semiconductor Photonics and Technology, 2004, 10(1): 35.
[1] Lee Y H, Jewell J L, Tell B, et al. Effects of etch depth and ion implantation on surface emitting microlasers[J]. Electron. Lett., 1990, 26:225-227.
[2] Thibeault B J, Strand T A, Wipiejewski T, et al. Evaluating the effects of optical and carrier losses in etched-post vertical cavity lasers[J]. J. Appl. Phys., 1995, 78:5 871-5 875.
[3] Hadley G R. Effective index model for vertical-cavity surface-emitting lasers[J]. Opt. Lett., 1995, 20:1 483-1 485.
[4] Hasnain G, Tai K, Yang L, et al. Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors[J]. IEEE J. Quantum Electron., 1991, 27:1 377-1 385.
[5] Pirek J, Abraham P, Bowers J E. Self-consistent analysis of high-temperature effects on strained-layer multiquantum-well InGaAsP-InP lasers[J]. IEEE J. Quantum Electron., 2000, 36:366-373.
[6] Van der Ziel J P, Chand N. High-temperature operation of 0. 98μm strained single quantum well In0. 2Ga0. 8As/GaAs lasers [J]. Appl. Phys. Lett., 1991, 58(13):1 437-1 439.
LI Lin, ZHONG Jing-chang, LIU Wen-li, ZHAO Ying-jie, ZHANG Yong-ming, SU Wei. 850nm Implant-confined VCSEL Temperature Characteristics[J]. 半导体光子学与技术, 2004, 10(1): 35. LI Lin, ZHONG Jing-chang, LIU Wen-li, ZHAO Ying-jie, ZHANG Yong-ming, SU Wei. 850nm Implant-confined VCSEL Temperature Characteristics[J]. Semiconductor Photonics and Technology, 2004, 10(1): 35.
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