Photonics Research, 2018, 6 (5): 05000B23, Published Online: Apr. 11, 2019 Copy Citation Text  Follow This Article

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Fig. 1. Sketches of (a) the silicon waveguide structure (Hwg=220  nm, Wwg=500  nm, and swg=100  nm) including the p-i-n lateral diode (wi=1.2  μm) and metal contacts and (b) the polarization-diversity loop setup based on the silicon waveguide highlighting CW (red arrows) and CCW (dark yellow arrows) propagation for signal (solid) and idler (dashed).

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Fig. 2. Experimental setup for conversion bandwidth measurements using the polarization-insensitive wavelength converter.

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Fig. 3. (a) Conversion bandwidth as a function of the signal wavelength at constant power per waveguide input (22 dBm at grating coupler) and (b) diode current as a function of the reverse bias applied to the diode for constant combined power at both grating couplers.

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Fig. 4. Experimental setup for the system characterization of the wavelength converter.

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Fig. 5. (a) BER and received OSNR of channel 4 as a function of the signal power in input to the circulator and (b) input and output spectra for the WDM PDM wavelength conversion (resolution bandwidth of 0.1 nm).

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Fig. 6. (a) BER as a function of the received OSNR/channel for signal and idler channels and (b) required receiver OSNR/channel and OSNR penalty for a BER=3.8×10−3 (HD-FEC).

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Fig. 7. Polarization dependence shown as average effective SNR difference between x and y polarizations for the signal and idler channels.

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Francesco Da Ros, Andrzej Gajda, Erik Liebig, Edson P. da Silva, Anna Pęczek, Peter D. Girouard, Andreas Mai, Klaus Petermann, Lars Zimmermann, Michael Galili, Leif K. Oxenløwe. Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with lateral p-i-n diode [Invited][J]. Photonics Research, 2018, 6(5): 05000B23.