δ掺杂Be受主GaAs/AlAs多量子阱的拉曼光谱

黄海北; 郑卫民; 丛伟艳; 孟祥艳; 翟剑波

doi:doi:10.3724/sp.j.1010.2014.00278

红外与毫米波学报, 2014, 33 (3): 278, 网络出版: 2014-06-30

δ掺杂Be受主GaAs/AlAs多量子阱的拉曼光谱

Raman spectra of Be δ-doped GaAs/AlAs multiple quantum wells

论文大纲

黄海北 ^*郑卫民丛伟艳孟祥艳翟剑波

作者单位

山东大学(威海)空间科学与物理学院,山东威海264209

拉曼光谱多量子阱打靶法受主能级 Raman spectra multiple-quantum wells iterative shooting algorithm acceptor energy levels

摘要

通过显微拉曼(Raman)光谱仪,对一系列δ掺杂GaAs/AlAs量子阱中浅受主铍(Be)原子能级间跃迁进行了研究.实验样品是利用分子束外延技术生长在GaAs衬底(100)面上的GaAs/AlAs多量子阱,阱宽范围从30到200,并在阱中央进行了受主Be原子的δ掺杂.在4.2K液氦温度下,对样品进行了Raman光谱测量,并与光致发光(PL)光谱进行了对比,清楚地观测到了受主原子从基态能级1S3/2(Γ6)到第一激发态能级2S3/2(Γ6)之间的跃迁.根据量子力学中的变分原理和打靶法算法,计算了量子阱中类氢受主Be原子1s到2s能级间跃迁能量,并和实验结果进行了比较.计算结果表明,受主1s到2s能级间跃迁的能量随量子阱宽度减小而单调增加,并且与实验结果符合较好.

Abstract

Raman spectra of internal transitions of shallow Be acceptors confined in the center of multiple-quantum GaAs/AlAs wells were studied. A series of Be δ-doped GaAs/AlAs multiple-quantum wells with doping at the well center and wells widths ranging from 30～200  were grown on (100) GaAs substrates by molecular beam epitaxy. Raman and photoluminescence spectra were measured at 4.2 K respectively. The transitions of Be acceptors from the 1S3/2(Γ6) ground state to the 2S3/2(Γ6) first-excited state were clearly observed in Raman spectra. An iterative shooting algorithm and a variational principle were introduced to obtain the 1～2s transition energy of quantum confined Be acceptors as a function of the well width. It was found that the acceptor transition energy increases with the decreasing of quantum wells widths, and the experimental results are in good agreement with the theoretical calculation.

参考文献

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黄海北, 郑卫民, 丛伟艳, 孟祥艳, 翟剑波. δ掺杂Be受主GaAs/AlAs多量子阱的拉曼光谱[J]. 红外与毫米波学报, 2014, 33(3): 278. HUANG Hai-Bei, ZHENG Wei-Min, CONG Wei-Yan, MENG Xiang-Yan, ZHAI Jian-Bo. Raman spectra of Be δ-doped GaAs/AlAs multiple quantum wells[J]. Journal of Infrared and Millimeter Waves, 2014, 33(3): 278.

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