Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition

Zhiwen Li; Jiangliu Luo; Shengqun Hu; Qiang Liu; Wenjie Yu; Youming Lu; Xinke Liu

doi:doi:10.1364/PRJ.385885

Photonics Research, 2020, 8 (6): 06000799, Published Online: Apr. 30, 2020

Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition Download： 834次

Zhiwen Li ^1†Jiangliu Luo ¹Shengqun Hu ¹Qiang Liu ^2†Wenjie Yu ²Youming Lu ¹Xinke Liu ^1,*

Author Affiliations

¹ College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

² State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Basic Information

DOI:	10.1364/PRJ.385885
中图分类号:	--
栏目:	Optoelectronics
项目基金:	National Key Research and Development Program of China10.13039/501100012166（2017YFB0403000）、 National Natural Science Foundation of China10.13039/501100001809（ 61974144）、 Guangdong Province Key Research and Development Plan（ 2019B010138002）、 Key Research and Development Program of Guangdong Province（ 2020B010174003）
收稿日期:	Dec. 19, 2019
修改稿日期:	Feb. 29, 2020
网络出版日期:	Apr. 30, 2020
通讯作者:	Xinke Liu (xkliu@szu.edu.cn)
备注:	--

Zhiwen Li, Jiangliu Luo, Shengqun Hu, Qiang Liu, Wenjie Yu, Youming Lu, Xinke Liu. Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition[J]. Photonics Research, 2020, 8(6): 06000799.

Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition Download： 834次

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