Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition

Zhiwen Li; Jiangliu Luo; Shengqun Hu; Qiang Liu; Wenjie Yu; Youming Lu; Xinke Liu

doi:doi:10.1364/PRJ.385885

Photonics Research, 2020, 8 (6): 06000799, Published Online: Apr. 30, 2020

Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition Download： 834次

Zhiwen Li ^1†Jiangliu Luo ¹Shengqun Hu ¹Qiang Liu ^2†Wenjie Yu ²Youming Lu ¹Xinke Liu ^1,*

Author Affiliations

¹ College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

² State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

知识挖掘

Zhiwen Li, Jiangliu Luo, Shengqun Hu, Qiang Liu, Wenjie Yu, Youming Lu, Xinke Liu. Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition[J]. Photonics Research, 2020, 8(6): 06000799.

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Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition Download： 834次

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