中国激光, 2011, 38 (4): 0417001, 网络出版: 2011-04-02   

梯度掺杂结构GaN光电阴极表面的净化

Cleaning of Gradient-Doping GaN Photocathode Surface
作者单位
1 南京理工大学电子工程与光电技术学院, 江苏 南京 210094
2 重庆大学光电工程学院, 重庆 400030
摘要
对梯度掺杂结构GaN阴极表面进行了化学清洗,清洗后利用X射线光电子能谱仪(XPS)分析了阴极表面,分析表明化学清洗能有效去除阴极表面的油脂和加工中残存的无机附着物;然后在超高真空室内710 ℃下对阴极进行了高温退火清洁,去除化学清洗后残留在阴极表面的C、O等吸附物,使阴极表面达到制备高性能负电子亲和势(NEA)光电阴极所需的原子级清洁程度。最后通过阴极激活实验加以验证,结果证实化学处理后热退火方法能有效净化梯度掺杂结构GaN阴极表面。
Abstract
Successful cleaning procedures for gradient-doping GaN surface have been investigated and achieved. The chemical cleaning of the gradient-doping GaN photocathode surface is carried out. The analysis of the surface after the chemical cleaning with X-ray photoelectron spectroscopy (XPS) shows that the chemical cleaning can effectively remove the organic attachments, residues in the process on the surface. Subsequent annealing of the surface under ultra-high vacuum at temperature of 710 ℃ leads to a decrease in the residual carbon, so the photocathode can obtain the ideal atom clean surface for high-performance negative electron affinity (NEA) photocathode. Finally, the photocathode active experimental results confirm that thermal annealing after chemical treatment method can effectively clean the gradient-doping GaN photocathode surface.
参考文献

[1] . Razeghi, A. Rogalski. Semiconductor ultraviolet detectors[J]. J. Appl. Phys., 1996, 79(10): 7433-7473.

[2] J. I. Pankove. GaN: from fundamentals to applications[J]. Mater. Sci. Eng., 1999, B61-62: 305~309

[3] I. Mizuno, T. Nihashi, T. Nagai et al.. Development of UV image intensifier tube with GaN photocathode[C]. SPIE, 2008, 6945: 69451N

[4] 杜晓晴, 常本康, 邹继军 等. 利用梯度掺杂获得高量子效率的GaAs光电阴极[J]. 光学学报, 2005, 25(10): 1411~1414

    Du Xiaoqing, Chang Benkang, Zou Jijun et al.. High quantum efficiency GaAs photocathode by gradient doping[J]. Acta Optica Sinica, 2005, 25(10): 1411~1414

[5] . Ingrey. III-V surface processing[J]. J. Vac. Sci. Technol. A, 1992, 10(4): 829-836.

[6] . 负电子亲和势GaN光电阴极激活机理研究[J]. 物理学报, 2009, 58(8): 5847-5851.

    . . Study of activation mechanism for NEA GaN photocathode[J]. Acta Physica Sinica, 2009, 58(8): 5847-5851.

[7] R. W. Hunt, L. Vanzetti, T. Castro et al.. Electronic structure, surface composition and long-range order in GaN[J]. Physica B: Condensed Matter, 1993, 185(1-4): 415~421

[8] . Machuca, Z. Liu, Y. Sun et al.. Simple method for cleaning gallium nitride (0001)[J]. J. Vac. Sci. Technol. A, 2002, 20(5): 1784-1786.

[9] V. J. Belitto, B. D. Thoms, D. D. Koleske et al.. HREELS of H/GaN(0001): evidence for Ga termination[J]. Surf. Sci., 1999, 430(1-3): 80~88

[10] . Ishikawa, S. Kobayashi, Y. Koide et al.. Effects of surface treatments and metal work functions on electrical properties at p-GaN/metal interfaces[J]. J. Appl. Phys., 1997, 81(3): 1315-1322.

[11] . Liu, Y. Sun, F. Machuca et al.. Preparation of clean GaAs(100) studied by synchrotron radiation photoemission[J]. J. Vac. Sci. Technol. A, 2003, 21(1): 212-218.

[12] . E. Tereshchenko, G. . Shaǐbler, A. S. Yaroshevich et al.. Low-temperature method of cleaning p-GaN(0001) surfaces for photoemitters with effective negative electron affinity[J]. Physics of the Solid State, 2004, 46(10): 1949-1953.

[13] 杜晓晴, 常本康, 钱芸生 等. GaN紫外光阴极材料的高低温两步制备实验研究[J]. 光学学报, 2010, 30(6): 1734~1738

    Du Xiaoqing, Chang Benkang, Qian Yunsheng et al.. Experimental investigation of high-low-temperature two-step preparation of GaN UV photocathode material[J]. Acta Optica Sinica, 2010, 30(6): 1734~1738

[14] 郭向阳, 王晓晖, 常本康 等. 负电子亲和势氮化镓光电阴极的制备工艺[J]. 光学学报, 2011, 31(2): 0219003

    Guo Xiangyang, Wang Xiaohui, Chang Benkang et al.. Preparation technique of negative-electron-affinity GaN photocathode[J]. Acta Optica Sinica, 2011, 31(2): 0219003

[15] Xiaoqing Du, Benkang Chang, Yunsheng Qian et al.. Transmission-mode GaN photocathode based on Graded AlxGa1-xN buffer layer[J]. Chin. Opt. Lett., 2011, 9(1): 010401~010404

[16] L. E. Bourreea, D. R. Chasseb, P. L. S. Thambana et al.. Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVD[C]. SPIE, 2003, 4796: 11~22

[17] . W. King, J. P. Barnak, M. D. Bremser et al.. Cleaning of AlN and GaN surfaces[J]. J. Appl. Phys., 1998, 84(9): 5248-5260.

[18] . M. Tracy, W. J. Mecouch, R. F. Davis et al.. Preparation and characterization of atomically clean, stoichiometric surfaces of n- and p-type GaN(0001)[J]. J. Appl. Phys., 2003, 94(5): 3163-3172.

[19] 乔建良. 反射式NEA GaN光电阴极激活与评估研究[D]. 南京: 南京理工大学, 2010. 48~49

    Qiao Jianliang. Research on Activation and Evaluation of Reflection-mode NEA GaN Photocathode[D]. Nanjing: Nanjing University of Science and Technology, 2010. 48~49

[20] . Liu, Y. Sun, F. Machuca et al.. Optimization and characterization of III-V surface cleaning[J]. J. Vac. Sci. Technol. B, 2003, 21(4): 1953-1958.

[21] 杜晓晴, 常本康, 钱芸生 等. GaN负电子亲和势光电阴极的激活工艺[J]. 中国激光, 2010, 37(2): 385~388

    Du Xiaoqing, Chang Benkang, Qian Yunsheng et al.. Activation technique of GaN negative electron affinity photocathode[J]. Chinese J. Lasers, 2010, 37(2): 385~388

[22] . L. Smith, S. W. King, R. J. Nemanich et al.. Cleaning of GaN surfaces[J]. Journal of Electronic Materials, 1996, 25(5): 805-810.

李飙, 徐源, 常本康, 杜晓睛, 王晓晖, 高频, 张俊举. 梯度掺杂结构GaN光电阴极表面的净化[J]. 中国激光, 2011, 38(4): 0417001. Li Biao, Xu Yuan, Chang Benkang, Du Xiaoqing, Wang Xiaohui, Gao Pin, Zhang Junju. Cleaning of Gradient-Doping GaN Photocathode Surface[J]. Chinese Journal of Lasers, 2011, 38(4): 0417001.

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