半导体光电, 2012, 33 (5): 672, 网络出版: 2012-11-01
氟基等离子体处理对高Al组分AlGaN肖特基接触反向漏电的改善
Improvement on Leakage Current for High Al-content AlGaN Schottky Diode by Fluoride-based Plasma Treatment
基本信息
DOI: | -- |
中图分类号: | TN304.23 |
栏目: | 材料、结构及工艺 |
项目基金: | 国家“973”计划项目(2012CB619306, 2012CB619301). |
收稿日期: | 2012-05-09 |
修改稿日期: | -- |
网络出版日期: | 2012-11-01 |
通讯作者: | 赵胜 (shengzhao@pku.edu.cn) |
备注: | -- |
赵胜, 秦志新, 刘芳, 卢励吾, 王新强, 沈波, 张国义. 氟基等离子体处理对高Al组分AlGaN肖特基接触反向漏电的改善[J]. 半导体光电, 2012, 33(5): 672. ZHAO Sheng, QIN Zhixin, LIU Fang, LU Liwu, WANG Xinqiang, SHEN Bo, ZHANG Guoyi. Improvement on Leakage Current for High Al-content AlGaN Schottky Diode by Fluoride-based Plasma Treatment[J]. Semiconductor Optoelectronics, 2012, 33(5): 672.