半导体光电, 2012, 33 (5): 672, 网络出版: 2012-11-01
氟基等离子体处理对高Al组分AlGaN肖特基接触反向漏电的改善
Improvement on Leakage Current for High Al-content AlGaN Schottky Diode by Fluoride-based Plasma Treatment
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赵胜, 秦志新, 刘芳, 卢励吾, 王新强, 沈波, 张国义. 氟基等离子体处理对高Al组分AlGaN肖特基接触反向漏电的改善[J]. 半导体光电, 2012, 33(5): 672. ZHAO Sheng, QIN Zhixin, LIU Fang, LU Liwu, WANG Xinqiang, SHEN Bo, ZHANG Guoyi. Improvement on Leakage Current for High Al-content AlGaN Schottky Diode by Fluoride-based Plasma Treatment[J]. Semiconductor Optoelectronics, 2012, 33(5): 672.
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