激光与光电子学进展, 2019, 56 (15): 152302, 网络出版: 2019-08-05 复制并引用该论文  本文已被引 2 次  被引通知

图 & 表

图 1. 4种材料的介电常数与电子浓度的关系。(a)实部;(b)虚部

Fig. 1. Permittivity as a function of electron concentration for four kinds of materials. (a) Real parts; (b) imaginary parts

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图 2. 硅基光波导移相器。(a)基于TCO材料的硅基光波导移相器结构;(b) HfO2/TCO界面介电常数分布;CdO薄膜截面累积层在栅电压下的(c)介电常数实部和(d)介电常数虚部与坐标的关系

Fig. 2. Silicon-based optical waveguide phase shifter. (a) Structure of proposed TCO-based optical waveguide phase shifter; (b) permittivity distribution of HfO2/TCO interface; (c) real and (d) imaginary parts of permittivity on gate voltage of cross-section cumulative layer of CdO film as functions of coordinate

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图 3. 实现2π移相时,TCO移相器的器件长度L2π、吸收系数α和器件插入损耗iloss, 2π 随外加电压的变化关系。(a)(b)单层模型;(c)(d)多层模型

Fig. 3. Device length L2π, absorption coefficient α, and insertion loss iloss, 2π of proposed TCO-based phase shifter as functions of gate voltage for achieving 2π-phase shift. (a)(b) Single-layer model; (c)(d) multi-layer model

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图 4. 基于TCO移相器的性能对比分析。基于CdO移相器的电场调控下|E|2的分布,(a) Vg=0和(b) Vg=1.4 V;在栅电压为1.4 V时TM模式的场分布,(c) Hx和(d) Ey;(e)基于SnO材料和(f)基于CdO材料的波导移相器电场分量在不同电压下沿着图4(c)中心白色虚线的分布;基于4种TCO材料的光波导移相器在最优工作电压下,累积层TCOacc的介电常数分布,(g)实部和(h)虚部

Fig. 4. Performance comparative analysis of TCO-based phase shifters. Distributions of |E|2 of CdO-based phase shifter at gate voltages of (a) Vg= 0 V and (b) Vg= 1.4 V; distributions of (c) Hx and (d) Ey of TM mode at gate voltage of 1.4 V; distributions of electric-field component along central white dot line in Fig. 4(c) at different gate voltages for (e) SnO-based and (f) CdO-based waveguide phase shifters; (g) real and (h) imaginary parts of permittivity of accumulation layer TCOacc of waveguide ph

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图 5. 器件结构参数对移相器性能的影响 。(a) CdO厚度;(b)硅波导的宽度和高度

Fig. 5. Influences of device structural parameters on phase shifter performance. (a) CdO thickness; (b) width and height of silicon-based waveguide

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表 14种TCO材料的光学性能参数

Table1. Optical performance parameters of four kinds of TCO materials

TCOmaterial Band gap /eV Effective massm*/me Mobility μ /(cm2·V-1·s-1) ε∞ Static dielectricconstant εs Reference CdO 2.4 0.18 300 5.40 18.1 [23] ITO 3.8 0.35 50 4.00 9.3 [16] SnO 3.6 0.30 50 3.90 12.5 [24] ZnO 3.4 0.28 35 3.85 8.3 [25]

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表 2基于不同TCO材料的硅波导移相器在产生2π相移时的性能参数

Table2. Performance parameters of silicon-based waveguide phase shifters based on different TCO materials when generating 2π-phase shift

TCOmaterial Single-layer model Multi-layer model iloss, 2π /dB Vg, opt /V L /μm VπL /(V·cm) iloss, 2π /dB Vg, opt /V L /μm VπL /(V·cm) CdO 2.37 2.0 155 0.016 2.803 1.4 253 0.018 ITO 6.9 1.6 323 0.026 8.034 1.2 437 0.028 SnO 7.9 1.6 242 0.019 9.250 1.2 377 0.022 ZnO 12.6 1.4 254 0.018 14.80 0.8 511 0.020

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聂立霞, 张燕, 鲜仕林, 秦俊, 王会丽, 毕磊. 基于高迁移率透明导电氧化物的高速、低插入损耗硅基光波导移相器研究[J]. 激光与光电子学进展, 2019, 56(15): 152302. Lixia Nie, Yan Zhang, Shilin Xian, Jun Qin, Huili Wang, Lei Bi. High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides[J]. Laser & Optoelectronics Progress, 2019, 56(15): 152302.