MgZnO半导体材料光致发光以及共振拉曼光谱研究
王玉超, 吴天准, 张权林, 陈明明, 苏龙兴, 汤子康. MgZnO半导体材料光致发光以及共振拉曼光谱研究[J]. 发光学报, 2013, 34(9): 1149.
WANG Yu-chao, WU Tian-zhun, ZHANG Quan-lin, CHEN Ming-ming, SU Long-xing, TANG Zi-kang. Study of MgZnO Semiconductor Materials Using Photoluminescence and Resonance Raman Spectroscopy[J]. Chinese Journal of Luminescence, 2013, 34(9): 1149.
[1] Tang Z K, Wong G K L, Yu P, et al. Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films ［J］. Appl. Phys. Lett., 1998, 72(25):3270-3272.
[2] Bagnall D M, Chen Y F, Zhu Z, et al. Optically pumped lasing of ZnO at room temperature ［J］. Appl. Phys. Lett., 1997, 70(17):2230-2232.
[3] Look D C. Recent advances in ZnO materials and devices ［J］. Mater. Sci. Eng. B, 2001, 80(1-3):383-387.
[4] Tsukazaki A, Ohtomo A, Onuma T, et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO ［J］. Nat. Mater., 2005, 4(1):42-46.
[5] Ohtomo A, Kawasaki M, Koida T, et al. MgxZn1-xO as a Ⅱ-Ⅵ widegap semiconductor alloy ［J］. Appl. Phys. Lett., 1998, 72(19):2466-2468.
[6] Ryu Y R, Lee T S, Lubguban J A, et al. Wide-band gap oxide alloy:BeZnO ［J］. Appl. Phys. Lett., 2006, 88(5):052103-1-3.
[7] Makino T, Segawa Y, Kawasaki M, et al. Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films ［J］. Appl. Phys. Lett., 2001, 78(9):1237-1239.
[8] Ju Z G, Shan C X, Jiang D Y, et al. MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range ［J］. Appl. Phys. Lett., 2008, 93(17):173505-1-3.
[9] Du X, Mei Z, Liu Z, et al. Controlled growth of high-quality ZnO-based films and fabrication of visible-blind and solar-blind ultra-violet detectors ［J］. Adv. Mater., 2009, 21(45):4625-4630.
[10] Wei Z P, Wu C X, Lu Y M, et al. MgxZn1-xO alloy grown by P-MBE and optical properties of MgZnO/ZnO heterostructure ［J］. Chin. J. Lumin.(发光学报), 2006, 27(5):832-833 (in Chinese).
[11] Chen J, Shen W Z, Chen N B, et al. The study of composition non-uniformity in ternary MgxZn1-xO thin films ［J］. J. Phys., 2003, 15(30):475-482.
[12] Zhu H, Shan C X, Li B H, et al. Enhanced photoluminescence caused by localized excitons observed in MgZnO alloy ［J］. J. Appl. Phys., 2009, 105(10):103508-1-5.
[13] Li X P, Guo P J, Su S C, et al. Investigation on near band edge UV luminescence of ZnO thin films ［J］. Chin. J. Lumin. (发光学报), 2012, 33(5):482-485 (in Chinese).
[14] Wu C X, Lu Y M, Li B H, et al. Structure and optical properties of MgxZn1-xO single-crystal thin films grown by P-MBE ［J］. Chin. J. Lumin.(发光学报), 2004, 25(3):277-281 (in Chinese).
[15] Bimberg D, Sondergeld M, Grobe E. Thermal dissociation of excitons bounds to neutral acceptors in high-purity GaAs ［J］. Phys. Rev. B, 1971, 4(10):3451-3455.
[16] Bundesmann C, Rahm A, Lorenz M, et al. Infrared optical properties of MgxZn1-xO thin films (0 ≤ x≤1):Long-wavelength optical phonons and dielectric constants ［J］. J. Appl. Phys., 2006, 99(11):113504-1-12.
[17] Chichibu S, Azuhata T, Sota T, et al. Spontaneous emission of localized excitons in InGaN single and multiquantum well structures ［J］. Appl. Phys. Lett., 1996, 69(27):4188-4190.
[18] Bergman L, Alexson D, Murphy P L, el al. Raman analysis of phonon lifetimes in AlN and GaN of wurtzite structure ［J］. Phys. Rev. B, 1999, 59(20):12977-12982.
[19] Guo L L, Zhang Y H, Shen W Z. Temperature dependence of Raman scattering in GaMnN ［J］. Appl. Phys. Lett., 2006, 89(16):161920-1-3.
[20] Link A, Bitzer K, Limmer W, et al. Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN ［J］. J. Appl. Phys., 1999, 86(11):6256-6260.
[21] Huang Y, Liu M, Li Z, et al. Raman spectroscopy study of ZnO-based ceramic films fabricated by novel sol-gel process ［J］. Mater. Sci. Eng. B, 2003, 97(2):111-116.
王玉超, 吴天准, 张权林, 陈明明, 苏龙兴, 汤子康. MgZnO半导体材料光致发光以及共振拉曼光谱研究[J]. 发光学报, 2013, 34(9): 1149. WANG Yu-chao, WU Tian-zhun, ZHANG Quan-lin, CHEN Ming-ming, SU Long-xing, TANG Zi-kang. Study of MgZnO Semiconductor Materials Using Photoluminescence and Resonance Raman Spectroscopy[J]. Chinese Journal of Luminescence, 2013, 34(9): 1149.
PDF全文
