MgZnO半导体材料光致发光以及共振拉曼光谱研究

用分子束外延设备在c面蓝宝石衬底上生长得到高质量MgxZn1-xO薄膜。X射线衍射显示, 当Mg摩尔分数在0～32.7%范围内时, 薄膜保持六方结构, (002)衍射峰半高宽为0.08°～0.12°, 薄膜结晶质量与现有报道的最高水平相当。随着薄膜中Mg含量的增加,紫外发光峰由378 nm蓝移至303 nm。对Mg0.108Zn0.892O薄膜变温光致发光光谱的研究发现, 束缚激子发光随温度变化存在两个不同的猝灭过程。对不同Mg含量薄膜共振拉曼光谱的研究发现, A1(LO)声子模频移与Mg含量在一定范围内呈线性关系, 这为确定MgxZn1-xO薄膜中的Mg含量提供了一种简单高效的方法。通过拉曼光谱与X射线衍射对比研究发现, 拉曼光谱在确定MgZnO材料相变时具有更高的灵敏度。最后, 研究了Mg0.057Zn0.943O薄膜的变温共振拉曼光谱, 对A1(LO)和A1(2LO)声子模随温度而变化的现象给出了一定的理论解释。

Abstract

High-quality MgxZn1-xO semiconductor materials had been grown using plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire substrate by inserting special metal buffer layers. X-ray diffraction results show that the MgZnO films keep hexagonal structure when the mole fraction of Mg varies from 0 to 32.7%, and the full width at half maximum (FWHM) of the films are 0.08°～0.12°. To the best of our knowledge, the crystal quality should be one of the highest level ever reported. With the increasing of Mg content in the films, the room-temperature photoluminescence (PL) of ultraviolet emission peaks are shifted from 378 nm to 303 nm. A detailed study on Mg0.108Zn0.892O film by temperature-dependent photoluminescence shows that the bound exciton emitting has two different quenching processes with the temperature increasing. In addition, resonance Raman spectroscopy indicates that there is a linear relationship between the content of Mg in the films and the A1(LO) phonon mode frequency shift. This relationship provides a simple and efficient method to determine Mg content in MgxZn1-xO films. It is found that Raman spectroscopy is more sensitive to the component phase change than the X-ray diffraction characterization. Finally, the temperature-dependent Raman spectroscopy was employed for Mg0.057Zn0.943O and a theoretical explanation of A1 (LO) and A1 (2LO) phonon mode frequency shift with temperature was given and discussed.

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王玉超, 吴天准, 张权林, 陈明明, 苏龙兴, 汤子康. MgZnO半导体材料光致发光以及共振拉曼光谱研究[J]. 发光学报, 2013, 34(9): 1149. WANG Yu-chao, WU Tian-zhun, ZHANG Quan-lin, CHEN Ming-ming, SU Long-xing, TANG Zi-kang. Study of MgZnO Semiconductor Materials Using Photoluminescence and Resonance Raman Spectroscopy[J]. Chinese Journal of Luminescence, 2013, 34(9): 1149.

MgZnO半导体材料光致发光以及共振拉曼光谱研究

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