CLP Researching 中国光学期刊网 光电汇 爱光学
Photonics Research, 2020, 8 (3): 03000279, Published Online: Feb. 12, 2020   

High-power hybrid GaN-based green laser diodes with ITO cladding layer Download： 684次

Get PDF
Full Text
图表
Metrics
More
Lei Hu 1,2Xiaoyu Ren 1Jianping Liu 1,2,*Aiqin Tian 1Lingrong Jiang 1,2Siyi Huang 1Wei Zhou 1Liqun Zhang 1Hui Yang 1,2
Author Affiliations
1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, China
2 School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
Copy Citation Text

Lei Hu, Xiaoyu Ren, Jianping Liu, Aiqin Tian, Lingrong Jiang, Siyi Huang, Wei Zhou, Liqun Zhang, Hui Yang. High-power hybrid GaN-based green laser diodes with ITO cladding layer[J]. Photonics Research, 2020, 8(3): 03000279.

References

[1] S. Nakamura. The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science, 1998, 281: 956-961.

[2] F. A. Ponce, D. P. Bour. Nitride-based semiconductors for blue and green light-emitting devices. Nature, 1997, 386: 351-359.

[3] T. Miyoshi, S. Masui, T. Okada, T. Yanamoto, T. Kozaki, S. Nagahama, T. Mukai. 510–515 nm InGaN-based green laser diodes on c-plane GaN substrate. Appl. Phys. Express, 2009, 2: 062201.

[4] U. Strauss, A. Somers, U. Heine, T. Wurm, M. Peter, C. Eichler, S. Gerhard, G. Bruederl, S. Tautz, B. Stojetz, A. Loeffler, H. Koenig. GaInN laser diodes from 440 to 530  nm: a performance study on single mode and multi-mode R&D designs. Proc. SPIE, 2017, 10123: 101230A.

[5] S. Takagi, Y. Enya, T. Kyono, M. Adachi, Y. Yoshizumi, T. Sumitomo, Y. Yamanaka, T. Kumano, S. Tokuyama, K. Sumiyoshi, N. Saga, M. Ueno, K. Katayama, T. Ikegami, T. Nakamura, K. Yanashima, H. Nakajima, K. Tasai, K. Naganuma, N. Fuutagawa, Y. Takiguchi, T. Hamaguchi, M. Ikeda. High-power (over 100  mW) green laser diodes on semipolar {2021} GaN substrates operating at wavelengths beyond 530  nm. Appl. Phys. Express, 2012, 5: 082102.

[6] S. P. DenBaars, D. Feezell, K. Kelchner, S. Pimputkar, C. C. Pan, C. C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, M. Iza, S. Keller, U. Mishra, J. S. Speck, S. Nakamura. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays. Acta Mater., 2013, 61: 945-951.

[7] A. Avramescu, T. Lermer, J. Müller, S. Tautz, D. Queren, S. Lutgen, U. Strauß. InGaN laser diodes with 50  mW output power emitting at 515  nm. Appl. Phys. Lett., 2009, 95: 071103.

[8] J. P. Liu, L. Q. Zhang, D. Y. Li, K. Zhou, Y. Cheng, W. Zhou, A. Q. Tian, M. Ikeda, S. M. Zhang, H. Yang. GaN-based blue laser diodes with 2.2  W of light output power under continuous-wave operation. IEEE Photonics Technol. Lett., 2017, 29: 2203-2206.

[9] A. Q. Tian, J. P. Liu, L. Q. Zhang, Z. C. Li, M. Ikeda, S. M. Zhang, D. Y. Li, P. Y. Wen, F. Zhang, Y. Cheng, X. W. Fan, H. Yang. Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region. Opt. Express, 2017, 25: 415-421.

[10] Y. Sun, K. Zhou, M. X. Feng, Z. C. Li, Y. Zhou, Q. Sun, J. P. Liu, L. Q. Zhang, D. Y. Li, X. J. Sun, D. B. Li, S. M. Zhang, M. Ikeda, H. Yang. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si. Light Sci. Appl., 2018, 7: 13.

[11] A. Q. Tian, J. P. Liu, L. Q. Zhang, L. R. Jiang, M. Ikeda, S. M. Zhang, D. Y. Li, P. Y. Wen, Y. Cheng, X. W. Fan, H. Yang. Significant increase of quantum efficiency of green InGaN quantum well by realizing step-flow growth. Appl. Phys. Lett., 2017, 111: 112102.

[12] L. R. Jiang, J. P. Liu, A. Q. Tian, Y. Cheng, Z. C. Li, L. Q. Zhang, S. M. Zhang, D. Y. Li, M. Ikeda, H. Yang. GaN-based green laser diodes. J. Semicond., 2016, 37: 111001.

[13] J. J. Wierer, J. Y. Tsao, D. S. Sizov. Comparison between blue lasers and light-emitting diodes for future solid-state lighting. Laser Photonics Rev., 2013, 7: 963-993.

[14] Y. Shimada, Y. Chida, N. Ohtsubo, T. Aoki, M. Takeuchi, T. Kuga, Y. Torii. A simplified 461-nm laser system using blue laser diodes and a hollow cathode lamp for laser cooling of Sr. Rev. Sci. Instrum., 2013, 84: 063101.

[15] P. H. Moriya, M. O. Araújo, F. Todão, M. Hemmerling, H. Keßler, R. F. Shiozaki, R. C. Teixerira, P. W. Courteille. Comparison between 403  nm and 497  nm repumping schemes for strontium magneto-optical traps. J. Phys. Commun., 2018, 2: 125008.

[16] S. Fujita. Wide-bandgap semiconductor materials: for their full bloom. Jpn. J. Appl. Phys., 2015, 54: 030101.

[17] M. A. Haase, J. Qiu, J. M. DePuydt, H. Cheng. Blue-green laser diodes. Appl. Phys. Lett., 1991, 59: 1272-1274.

[18] Y. Mei, G. E. Weng, B. P. Zhang, J. P. Liu, W. Hofmann, L. Y. Ying, J. Y. Zhang, Z. C. Li, H. Yang, H. C. Kuo. Quantum dot vertical-cavity surface-emitting lasers covering the ‘green gap’. Light Sci. Appl., 2016, 6: e16199.

[19] R. B. Xu, Y. Mei, H. Xu, L. Y. Ying, Z. Zheng, H. Long, D. Zhang, B. P. Zhang, J. P. Liu. Green vertical-cavity surface-emitting lasers based on combination of blue-emitting quantum wells and cavity-enhanced recombination. IEEE Trans. Electron Devices, 2018, 65: 4401-4406.

[20] C. P. Massabuau, M. J. Davies, F. Oehler, S. K. Pamenter, E. J. Thrush, M. J. Kappers, A. Kovács, T. Williams, M. A. Hopkins, C. J. Humphreys, P. Dawson, R. E. Dunin-Borkowski, J. Etheridge, D. W. E. Allsopp, R. A. Oliver. The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem. Appl. Phys. Lett., 2014, 105: 112110.

[21] U. Strauß, A. Avramescu, T. Lermer, D. Queren, A. Gomez-Iglesias, C. Eichler, J. Muller, G. Brüderl, S. Lutgen. Pros and cons of green InGaN laser on c-plane GaN. Phys. Status Solidi B, 2011, 248: 652-657.

[22] S. Nagahama, T. Yanamoto, M. Sano, T. Mukai. Wavelength dependence of InGaN laser diode characteristics. Jpn. J. Appl. Phys., 2001, 40: 3075-3081.

[23] D. Queren, A. Avramescu, M. Schillgalies, M. Peter, T. Meyer, G. Brüderl, S. Lutgen, U. Strauß. Epitaxial design of 475  nm InGaN laser diodes with reduced wavelength shift. Phys. Status Solidi C, 2009, 6: S826-S829.

[24] Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, D. G. Zhao, D. S. Jiang, H. B. Wang, H. Yang. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures during the epitaxial growth. Appl. Phys. Lett., 2013, 103: 152109.

[25] J. P. Liu, Z. C. Li, L. Q. Zhang, F. Zhang, A. Q. Tian, K. Zhou, D. Y. Li, S. M. Zhang, H. Yang. Realization of InGaN laser diodes above 500  nm by growth optimization of the InGaN/GaN active region. Appl. Phys. Express, 2014, 7: 111001.

[26] D. Bour, C. Chua, Z. H. Yang, M. Teepe, N. Johnson. Silver-clad nitride semiconductor laser diode. Appl. Phys. Lett., 2009, 94: 041124.

[27] T. Margalith, O. Buchinsky, D. A. Cohen, A. C. Abare, M. Hansen, S. P. DenBaars, L. A. Coldren. Indium tin oxide contacts to gallium nitride optoelectronic devices. Appl. Phys. Lett., 1999, 74: 3930-3932.

[28] H. Y. Liu, V. Avrutin, N. Izyumskaya, Ü. Özgür, H. Morkoç. Transparent conducting oxides for electrode applications in light emitting and absorbing devices. Superlattices Microstruct., 2010, 48: 458-484.

[29] A. Myzaferi, A. H. Reading, D. A. Cohen, M. Farrell, S. Nakamura, J. S. Speck, S. P. DenBaars. Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes. Appl. Phys. Lett., 2016, 109: 061109.

[30] S. Mehari, D. A. Cohen, D. L. Becerra, S. Nakamura, S. P. Dnbaars. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 2021 GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers. Opt. Express, 2018, 26: 1564-1572.

[31] J. Chilwell, I. Hodgkinson. Thin-films field-transfer matrix theory of planar multilayer waveguides and reflection from prism-loaded waveguides. J. Opt. Soc. Am. A, 1984, 1: 742-753.

[32] G. M. Laws, E. C. Larkins, I. Harrison, C. Molloy, D. Somerford. Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys. J. Appl. Phys., 2001, 89: 1108-1115.

[33] L. Q. Zhang, D. S. Jiang, J. J. Zhu, D. G. Zhao, Z. S. Liu, S. M. Zhang, H. Yang. Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green. J. Appl. Phys., 2009, 105: 023104.

[34] M. Kuc, Ł. Piskorski, A. K. Sokół, M. Dems, M. Wasiak, R. P. Sarzała, T. Czyszanowski. Optical simulations of blue and green semipolar InGaN/GaN lasers. Proc. SPIE, 2019, 10532: 1053228.

[35] S. Boycheva, A. K. Sytchkova, A. Piegari. Optical and electrical characterization of r.f. sputtered ITO films developed as art protection coatings. Thin Solid Films, 2007, 515: 8474-8478.

[36] A. J. Wen, K. L. Chen, M. H. Yang, W. T. Hsiao, L. G. Chao, M. S. Leu. Effect of substrate angle on properties of ITO films deposited by cathodic arc ion plating with In-Sn alloy target. Surf. Coat. Technol., 2005, 198: 362-366.

[37] M. T. Hardy, C. O. Holder, D. F. Feezell, S. Nakamura, J. S. Speck, D. A. Cohen, S. P. DenBaars. Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes. Appl. Phys. Lett., 2013, 103: 081103.

[38] J. L. Chen, W. D. Brewer. Ohmic contacts on p-GaN. Adv. Electron. Mater., 2015, 1: 1500113.

[39] J. S. Jang, T. Y. Seong. Low-resistance and thermally stable indium tin oxide ohmic contacts on strained p-In0.15Ga0.85N/p-GaN layer. J. Appl. Phys., 2007, 101: 013711.

[40] M. Meneghini, N. Trivellin, G. Meneghesso, E. Zanoni, U. Zehnder, B. Hahn. A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes. J. Appl. Phys., 2009, 106: 114508.

[41] D. Queren, M. Schillgalies, A. Avramescu, G. Brüderl, A. Laubsch, S. Lutgen, U. Strauß. Quality and thermal stability of thin InGaN films. J. Cryst. Growth, 2009, 311: 2933-2936.

[42] J. Li, T. N. Oder, M. L. Nakarmi, J. Y. Lin, H. X. Jiang. Optical and electrical properties of Mg-doped p-type AlxGa1−xN. Appl. Phys. Lett., 2002, 80: 1210-1212.

[43] A. Q. Tian, J. P. Liu, M. Ikeda, S. M. Zhang, Z. C. Li, M. X. Feng, K. Zhou, D. Y. Li, L. Q. Zhang, P. Y. Wen, F. Zhang, H. Yang. Conductivity enhancement in AlGaN:Mg by suppressing the incorporation of carbon impurity. Appl. Phys. Express, 2015, 8: 051001.

[44] G. Parish, S. Keller, S. P. Denbaars, U. K. Mishra. SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN. J. Electron. Mater., 2000, 29: 15-20.

Lei Hu, Xiaoyu Ren, Jianping Liu, Aiqin Tian, Lingrong Jiang, Siyi Huang, Wei Zhou, Liqun Zhang, Hui Yang. High-power hybrid GaN-based green laser diodes with ITO cladding layer[J]. Photonics Research, 2020, 8(3): 03000279.

Figures gallery of this article
论文摘要 Full Text  图 & 表 补充材料 基本信息 知识挖掘 Metrics PDF全文参考文献 & 引文
本文已被 1 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文： TXT   |   EndNote

被引通知
PDF全文

相关论文

加载中...

相关资讯

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务，点击此处了解我们的隐私策略。 如您需继续使用本网站，请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!
快速查询 高级查询
最近搜索：
大家在搜： 人工智能     图像处理     光子 
热门搜索： 机器视觉     光通信     光纤传感器