光学学报, 2017, 37 (2): 0222002, 网络出版: 2017-02-13   

极紫外光刻动态气体锁抑制率的实验研究

Experimental Research on Suppression Ratio of Dynamic Gas Lock for Extreme Ultraviolet Lithography
陈进新 1,2,*王宇 1谢婉露 1,2
作者单位
1 中国科学院光电研究院 北京 100094
2 北京市准分子激光工程技术研究中心 北京 100094
引用该论文

陈进新, 王宇, 谢婉露. 极紫外光刻动态气体锁抑制率的实验研究[J]. 光学学报, 2017, 37(2): 0222002.

Chen Jinxin, Wang Yu, Xie Wanlu. Experimental Research on Suppression Ratio of Dynamic Gas Lock for Extreme Ultraviolet Lithography[J]. Acta Optica Sinica, 2017, 37(2): 0222002.

参考文献

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[8] Jacobs J H W, Brewster B D, Livesey R G. Lithographic apparatus, device manufacturing method, and device manufactured thereby: US7502095B2[P]. 2009-03-10.

[9] Srivastava A, Pereira S, Gaffney T. Sub-atmospheric gas purification for EUVL vacuum environment control[C]. SPIE, 2012, 8322: 83222U.

[10] Schoormans C C J, Eussen E J M, Koenen W H G A, et al. Lithographic apparatus and device manufacturing method: US7557903B2[P]. 2009-07-07.

[11] 陈进新, 王魁波, 王 宇, 等. 一种动态气体锁: CN201310320652.9[P]. 2015-04-08.

[12] 陈进新, 王 宇, 吴晓斌, 等. 一种螺旋气流动态气体锁: CN201310343253.4[P]. 2015-04-01.

[13] 陈进新, 王魁波, 王 宇. 极紫外真空动态气体锁流场分析与研究[J]. 真空科学与技术学报, 2015, 35(8): 940-946.

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[14] 陈进新, 王 宇, 谢婉露. 极紫外光刻动态气体锁抑制率的理论研究[J]. 激光与光电子学进展, 2016, 53(5): 053401.

    Chen Jinxin, Wang Yu, Xie Wanlu. Theoretical investigation on suppression ratio of dynamic gas lock for extreme ultraviolet lithography[J]. Laser & Optoelectronics Progress, 2016, 53(5): 053401.

[15] 徐成海. 真空工程技术[M]. 北京: 化学工业出版社, 2006

陈进新, 王宇, 谢婉露. 极紫外光刻动态气体锁抑制率的实验研究[J]. 光学学报, 2017, 37(2): 0222002. Chen Jinxin, Wang Yu, Xie Wanlu. Experimental Research on Suppression Ratio of Dynamic Gas Lock for Extreme Ultraviolet Lithography[J]. Acta Optica Sinica, 2017, 37(2): 0222002.

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