高性能短波红外 InGaAs焦平面探测器研究进展

邵秀梅; 龚海梅; 李雪; 方家熊; 唐恒敬; 李淘; 黄松垒; 黄张成

红外技术, 2016, 38 (8): 629, 网络出版: 2016-09-12

高性能短波红外 InGaAs焦平面探测器研究进展

Developments of High Performance Short-wave Infrared InGaAs Focal Plane Detectors

论文大纲

邵秀梅 ^1,2,*龚海梅 ^1,2李雪 ^1,2方家熊 ^1,2唐恒敬 ^1,2李淘 ^1,2黄松垒 ^1,2黄张成 ^1,2

作者单位

¹ 中国科学院上海技术物理研究所传感技术国家重点实验室，上海 200083

² 中国科学院红外成像材料与器件重点实验室，上海 200083

焦平面短波红外暗电流探测率 InGaAs InGaAs FPAs SWIR dark current detectivity

摘要

中科院上海技物所近十年来开展了高性能短波红外InGaAs 焦平面探测器的研究。0.9～1.7 ?m近红外InGaAs 焦平面探测器已实现了256×1、512×1、1024×1 等多种线列规格，以及320×256、640×512、4000×128 等面阵，室温暗电流密度＜5 nA/cm2，室温峰值探测率优于5×1012 cm?Hz1/2/W。同时，开展了向可见波段拓展的320×256 焦平面探测器研究，光谱范围0.5～1.7 ?m，在0.8 ?m 的量子效率约20%，在1.0 ?m 的量子效率约45%。针对高光谱应用需求，上海技物所开展了1.0～2.5?m 短波红外InGaAs 探测器研究，暗电流密度小于10 nA/cm2@200K，形成了512×256、1024×128等多规格探测器，峰值量子效率高于75%，峰值探测率优于5×1011 cm?Hz1/2/W。

Abstract

High performance SWIR InGaAs FPAs have been studied in Shanghai Institute of Technical Physics(SITP) over the past ten years. Some typical linear 256×1, 512×1, 1024×1 FPAs and 2D format 320×256,640×512, 4000×128 FPAs were obtained with relative spectral response in the range of 0.9 ?m to 1.70 ?m. The dark current density is about 5 nA/cm2 and the peak detectivity is superior to 5×1012 cmHz1/2/W at room temperature. At the same time, 320×256 InGaAs FPAs with response extended to visible wavelength band have been studied and fabricated. The results indicated that the response of the FPAs covered the wavelength band from 0.5 ?m to 1.70 ?m. Quantum efficiency is approximately 20% at 0.8 ?m, and 45% at 1.0 ?m. The extended InGaAs FPAs with the response wavelength from 1.0 ?m to 2.5 ?m were also focused in SITP for hyperspectral applications. The dark current density dropped to about 10 nA/cm2 at 200 K. 2D format 512×256, 1024×128 extended InGaAs FPAs were developed with peak detectivity superior to 5×1012 cmHz1/2/W and quantum efficiency superior to 75%.

参考文献

[1] MacDougal Michael, Hood Andrew, Geske Jon, et al. InGaAs focal plane arrays for low light level SWIR imaging[C]//Proc. of SPIE, 2011,8012: 801221.

[2] Battaglia J, Blessinger M, Enriquez M, et al. An uncooled 1280×1024 InGaAs focal plane array for small platform, shortwave infrared imaging[C]//Proc of SPIE, 2009, 7298: 72983C1-8.

[3] Cohen M J, Olsen Gregory H. Room temperature InGaAs camera for NIR imaging[C]//Proc of SPIE, 1993, 1946: 436-443.

[4] Tara Martin, Dixon Peter, Gagliardi Mari-Anne. 320×240 pixel InGaAs/InP focal plane array for short-wave infrared and visible light imaging[C]//Proc. of SPIE, 2005, 5726: 85-91.

[5] Tara Martin, Brubaker Robert, Dixon Peter, et al. 640×512 InGaAs focal plane array camera for visible and SWIR imaging[C]//Proc. of SPIE, 2005, 5783: 12-20.

[6] Cohen Marshall J, Lange Michael J, Ettenberg Martin H, et al. A thin film Indium Gallium Arsenide focal plane array for visible and near infrared hyperspectral imaging[C]//12th Annual Meeting on IEEE Lasers and Electro-Optics Society, 1999, 2: 744-745.

[7] Battaglia J, Blessinger M, Enriquez M, et al. An uncooled 1280×1024 InGaAs focal plane array for small platform, shortwave infrared imaging[C]//Proc. of SPIE, 2009, 7298: 72983C.

[8] Onat Bora M, HUANG Wei, Masaun Navneet, et al. Ultra low dark current InGaAs technology for focal plane arrays for low-light level visible-shortwave infrared imaging[C]// Proc. of SPIE, 2007, 6542:65420L.

[9] Sensors Unlimited. Micro-SWIR 640 CSX Legacy Camera[EB/OL].[2015]. http://www.sensorsinc.com/products/detail/legacy -640csxswir-camera.

[10] Teledyne Judson Technologies. Indium Gallium Arsenide Detectors[EB/OL]. [2014]. http://www.teledynejudson.com/InGaAs. html.

[11] Xenics. PRODUCT SELECTOR GUIDE[EB/OL]. [2016]. http://www.xenics.com/en/products/cameras f[0]=field_technology_term%3A624.

[12] Sofradir. SWIR DETECTORS[EB/OL]. [2016]. http://www. sofradir.com/ category_product/swir-detectors/.

[13] LI Xue, HUANG Songlei, CHEN Yu, et al. Noise characteristics of short wavelength infrared InGaAs linear focal plane arrays[J].Journal of Applied Physics, 2012, 112(6):1-5.

[14] 邵秀梅, 李淘, 邓洪海, 等. 平面型24 元InGaAs 短波红外探测器[J]. 红外技术, 2011, 33(9): 501-504.

SHAO Xiumei, LI Tao, DENG Honghai, et al. Planar-type 24×1 InGaAs short wave infrared detectors[J]. Infrared Technology, 2011,33(9): 501-504

[15] SHI M, TANGH J, SHAOX M, et al. Interface property of silicon nitride films grown by ICPCVD and PECVD on In0.82Al0.18As[J].Infrared Physics and Technology, 2015, 71: 384-388.

[16] HUANG Xing, LI Xue, SHI Ming, et al. The 1/f noise characteristics of In0.83Ga0.17As photodiodes with SiNx passivation films fabricated by two different techniques[J]. Infrared Physics & Technology, 2014,67: 596-599.

[17] HUANG Xing, LI Xue, SHI Ming, et al. Effect of proton irradiation on extended wavelength In0.83Ga0.17As infrared detector[J]. Infrared Physics & Technology, 2015, 71: 514-517.

邵秀梅, 龚海梅, 李雪, 方家熊, 唐恒敬, 李淘, 黄松垒, 黄张成. 高性能短波红外 InGaAs焦平面探测器研究进展[J]. 红外技术, 2016, 38(8): 629. SHAO Xiumei, GONG Haimei, LI Xue, FANG Jiaxiong, TANG Hengjing, LI Tao, HUANG Songlei, HUANG Zhangchen. Developments of High Performance Short-wave Infrared InGaAs Focal Plane Detectors[J]. Infrared Technology, 2016, 38(8): 629.

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