脉冲激光沉积法制备氧化锌薄膜

刘耀东; 赵磊

中国激光, 2007, 34 (4): 534, 网络出版: 2007-04-25

脉冲激光沉积法制备氧化锌薄膜

Preparation of ZnO Thin Films by Pulsed Laser Deposition

论文大纲

刘耀东 ^1,*赵磊 ²

作者单位

¹ 长春工业大学材料科学与工程学院, 吉林长春 130012

² 吉林大学汽车材料教育部重点实验室, 吉林长春 130025

薄膜 ZnO薄膜紫外受激发射脉冲激光沉积 thin films ZnO thin films ultraviolet stimulated emission pulsed laser deposition

摘要

ZnO是一种新型的Ⅱ-Ⅵ族半导体材料,具有优良的晶格、光学和电学性能,其显著的特点是在紫外波段存在受激发射。利用脉冲激光沉积法(PLD)在氧气氛中烧蚀锌靶制备了纳米晶氧化锌薄膜,衬底为石英玻璃,晶粒尺寸约为28～35 nm。X射线衍射(XRD)结果和光致发光(PL)光谱的测量表明,当衬底温度在100～250 ℃范围内时,所获得的ZnO薄膜具有c轴的择优取向,所有样品的强紫外发射中心均在378～385 nm范围内,深能级发射中心约518～558 nm,衬底温度为200 ℃时,得到了单一的紫外光发射(没有深能级发光)。这归因于其较高的结晶质量。

Abstract

ZnO thin films, as novel materials for Ⅱ-Ⅵ semiconductors, have excellent microstructural, optical and electronic properties. Ultraviolet (UV) stimulated emission is an outstanding merit of ZnO thin films. Nanostructured ZnO films with grain size of 28～35 nm have been prepared on quartz glass substrates by pulse laser ablation of Zn target in oxygen atmosphere. The structural and optical properties of the films were studied. ZnO thin films with typical c-axis (002) orientation were successfully deposited at a range of 100～250 ℃. The results obtained by X-ray diffraction (XRD) and photoluminescence (PL) measurements show that the strong UV emission centering is about 378～385 nm and deep-level emission centering about 518～558 nm in the room temperature PL spectra of the ZnO films. It is noteworthy that only strong UV emission (without deep-level emission) was obtained from ZnO film deposited at the substrate temperature of 200 ℃. This was attributed to its best crystallization.

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刘耀东, 赵磊. 脉冲激光沉积法制备氧化锌薄膜[J]. 中国激光, 2007, 34(4): 534. 刘耀东, 赵磊. Preparation of ZnO Thin Films by Pulsed Laser Deposition[J]. Chinese Journal of Lasers, 2007, 34(4): 534.

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