光学学报, 2005, 25 (5): 683, 网络出版: 2006-05-22   

CdSeS量子点的光吸收谱亚结构和光致发光激发谱分析

Photoluminescence Excitation Spectra and Absorption Spectra Analysis of CdSeS Quantum Dots
作者单位
1 北京师范大学物理系,北京 100875
2 装甲兵工程学院基础部, 北京 100072
3 北京师范大学分析测试中心, 北京 100875
摘要
用光致发光激发(PLE)谱分析吸收谱的亚结构。实验样品是共熔法制备的CdSeS量子点玻璃,量子点的生长时间分别为2 h和4 h,高分辨透射电子显微镜(HRTEM)分析得到样品中量子点的平均直径分别为3.6 nm和3.8 nm。在室温下对样品进行了光吸收谱和光致发光激发谱研究。光吸收谱显示了量子尺寸效应,光致发光激发谱中低能端有两个明显的峰。考虑价带简并以及电子与空穴之间的相互作用,通过理论分析和数值计算,得到1S3/2-1Se和2S3/2-1Se的跃迁能量及其随量子点半径的变化,由此确认光致发光激发谱中的两个峰分别为1S3/2-1Se和2S3/2-1Se跃迁。
Abstract
The sub-structure in absorption spectrum was analyzed by means of photoluminescence excitation (PLE) spectra. The glass samples of CdSeS quantum dots were prepared by co-melting and analyzed by means of high resolution transmission electron microscopy (HRTEM), the annealing time was 2 h and 4 h respectively, the quantum dots' diameter was 3.6 and 3.8 nm respectively. Absorption spectra and photoluminescence excitation spectra were measured at room temperature. The absorption spectra showed quantum size-dependent effects. Two peaks were observed in photoluminescence excitation spectra. The valence band degeneracy and the interaction between electrons and holes were taken into account, the energies of 1S3/2-1Se and 2S3/2-1Se transitions versus quantum dots' radii were obtained by theoretical analysis and numerical calculation. The two peaks in photoluminescence excitation spectra are assigned to 1S3/2-1Se and 2S3/2-1Se transitions, respectively.
参考文献

[1] Woggon U. Optical Properties of Semiconductor Quantum Dots[M]. Berlin: Springer-Verlag, 1997. 18~21

[2] Liu Chengshi, Ma Benkun. Dynamical behaviors of two electrons confined in a line shape conpled three quantum dots driven by a AC electric field[J]. Acta Optica Sinica, 2004, 24(5): 700~704 (in Chinese)
刘承师,马本堃. 交变电场驱动下三量子点中双电子的动力学[J]. 光学学报, 2004, 24(5): 700~704

[3] . Ekimov. Growth and optical properties of semiconductor nanocrystals in a glass matrix[J]. J. Luminescence, 1996, 70: 1-20.

[4] . Heitz, M. Veit, N. N. Ledentsov et al.. Energy relaxation by multiphonon process in InAs/GaAs quantum dots[J]. Phys. Rev. (B), 1997, 56(6): 10435-10445.

[5] . Toda, O. Moriwaki, M. Nishioka et al.. Efficient carrier relaxation mechanism in InGaAs/GaAs self-assembled quantum dots based on the existence of continuum states[J]. Phys. Rev. Lett., 1999, 82(20): 4114-4117.

[6] . Woggon, F. Gindele, O. Wind et al.. Exchange interaction and phonon confinement in CdSe quantum dots[J]. Phys. Rev. (B), 1996, 54(3): 1506-1509.

[7] . . Growth and analysis of CdSSe quantum dots in a glass matrix[J]. J. Beijing Normal University (Natural Science), 2001, 37(2): 205-207.

[8] Wu Changshu, Tian Qiang Liu Huimin et al.. PL spectra of interface states of CdSSe quantum dots in glass[J]. Chin. J. Semiconductors, 2003, 24(5): 481~484 (in Chinese)
吴畅书,田强,刘惠民 等. 玻璃中半导体CdSSe量子点的界面态发光[J]. 半导体学报, 2003, 24(5): 481~484

[9] . . Absorption and intensity-dependent photoluminescence measurements on CdSe quantum dots: assignment of the first electronic transitions[J]. J. Opt. Soc. Am. (B), 1993, 10(1): 100-107.

[10] Wang Yinshu, Zheng Dong, Sun Ping et al.. Photoluminescence of CdSeS nanocrystals at room temperature[J]. Chin. J. Lumin., 2003, 24(2): 139~143 (in Chinese)
王引书,郑东,孙萍 等. 玻璃中CdSeS纳米晶体的室温光致发光谱[J]. 发光学报, 2003, 24(2): 139~143

[11] Aggarwal R L, Willardson R K, Beer A C et al..Semiconductors and Semimetals[M]. New York: Academic Press, 1972. 151

刘炳灿, 田强, 吴正龙. CdSeS量子点的光吸收谱亚结构和光致发光激发谱分析[J]. 光学学报, 2005, 25(5): 683. 刘炳灿, 田强, 吴正龙. Photoluminescence Excitation Spectra and Absorption Spectra Analysis of CdSeS Quantum Dots[J]. Acta Optica Sinica, 2005, 25(5): 683.

本文已被 2 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!