Photonics Research, 2020, 8 (8): 08001301, Published Online: Jul. 14, 2020
Self-powered, flexible, and ultrabroadband ultraviolet-terahertz photodetector based on a laser-reduced graphene oxide/CsPbBr3 composite Download: 805次
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Fig. 1. (a)–(e) Processing procedures of the LSG / CsPbBr 3 PD; (f) schematic structure of the LSG / CsPbBr 3 PD; (g) surface morphology of laser reduced GO with different laser powers under electron microscope view (10 × 40 ).
Fig. 2. (a) XRD pattern of the CsPbBr 3 ; (b) Raman characterization of the GO and LSG; (c) absorption spectra of the LSG and LSG / CsPbBr 3 ; (d) PL spectra of the LSG, LSG / CsPbBr 3 , and CsPbBr 3 ; (e) surface and cross section SEM image of the LSG / CsPbBr 3 ; (f) EDS spectrum of LSG / CsPbBr 3 .
Fig. 3. (a), (b) Photocurrent voltage ( I – V ) curves of the LSG and LSG / CsPbBr 3 PDs under different 532 nm power densities irradiation; (c), (d) optical switching characteristics and time responses of the LSG PD and LSG / CsPbBr 3 PD under 932.48 mW / cm 2 power intensity at 532 nm laser.
Fig. 4. Optical-electrical response characteristics of the LSG / CsPbBr 3 PD under different power densities of 532 nm illumination at 0 V bias voltage. (a) Optical switching characteristics of the device under different power intensities; (b) photoresponsivities and photocurrents curves as a function of the laser intensity E e of the LSG / CsPbBr 3 PD; (c), (d) D * and NEP curves as a function of the laser intensity E e , respectively.
Fig. 5. (a) Temporal photocurrent responses of the LSG device under 1064 and 1177 nm illumination at 390 mW / cm 2 ; (b) temporal photocurrent responses of the LSG device under 10.6 and 118 μm (2.52 THz) illumination at 390 mW / cm 2 ; (c) temporal photocurrent responses of the LSG / CsPbBr 3 device under 405, 532, and 1064 nm illumination at 390 mW / cm 2 ; (d) temporal photocurrent responses of the LSG / CsPbBr 3 device under 10.6 and 118 μm (2.52 THz) illumination at 390 mW / cm 2 ; (e) multiwavelength optical switch photocurrent curves from 405 nm to 118 μm; (f) ultrabroadband R and NEP curves of the device with the wavelength range from 405 nm to 118 μm at 0 V bias voltage.
Fig. 6. (a) Mechanism schematic for PTE effect; (b) schematic of photocurrent generation process of the device; (c) temperature profile of active location under dark and 532 nm illumination; inset, infrared imaging temperature distribution map of the device under 532 nm illumination; (d) increased temperature profile of the device under 532 nm laser illumination; (e), (f) current voltage ( I – V ) characteristics of the device under 532 and 1177 nm laser irradiation, respectively; (g) photocurrent and temperature variation curves of the device under 532 nm laser illumination.
Fig. 7. (a) I – V curves of the LSG / CsPbBr 3 device under 532 nm irradiation ( E e = 58.28 mW / cm 2 ) before and after bending with different bending states; (b) temporal photocurrent curves of the LSG / CsPbBr 3 device before (solid lines) and after (dotted lines) a bending test for 1000 times under 532 nm laser illumination ( E e = 58.28 mW / cm 2 ) at 0 V voltage.
Table1. Optoelectronic Characteristics of Typical Photodetectors Based on Graphene and Other 2D/3D Materials
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Yifan Li, Yating Zhang, Zhiliang Chen, Qingyan Li, Tengteng Li, Mengyao Li, Hongliang Zhao, Quan Sheng, Wei Shi, Jianquan Yao. Self-powered, flexible, and ultrabroadband ultraviolet-terahertz photodetector based on a laser-reduced graphene oxide/CsPbBr3 composite[J]. Photonics Research, 2020, 8(8): 08001301.