发光学报, 2011, 32 (10): 1020, 网络出版: 2011-10-21  

利用MOCVD技术生长As掺杂的p-ZnMgO薄膜

As-doped p-type ZnMgO Films Grown by MOCVD
作者单位
1 集成光电子学国家重点联合实验室 吉林大学电子科学与工程学院, 吉林 长春 130012
2 大连理工大学 物理与光电工程学院, 辽宁 大连 116024
引用该论文

赵龙, 殷伟, 夏晓川, 王辉, 史志锋, 赵旺, 王瑾, 董鑫, 张宝林, 杜国同. 利用MOCVD技术生长As掺杂的p-ZnMgO薄膜[J]. 发光学报, 2011, 32(10): 1020.

ZHAO Long, YIN Wei, XIA Xiao-chuan, WANG Hui, SHI Zhi-feng, ZHAO Wang, WANG Jin, DONG Xin, ZHANG Bao-lin, DU Guo-tong. As-doped p-type ZnMgO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2011, 32(10): 1020.

参考文献

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赵龙, 殷伟, 夏晓川, 王辉, 史志锋, 赵旺, 王瑾, 董鑫, 张宝林, 杜国同. 利用MOCVD技术生长As掺杂的p-ZnMgO薄膜[J]. 发光学报, 2011, 32(10): 1020. ZHAO Long, YIN Wei, XIA Xiao-chuan, WANG Hui, SHI Zhi-feng, ZHAO Wang, WANG Jin, DONG Xin, ZHANG Bao-lin, DU Guo-tong. As-doped p-type ZnMgO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2011, 32(10): 1020.

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