投影光刻机调焦调平传感技术的研究进展
[1] Bruggroaf P P. Optical lithography to 2000 and beyond. Solid State Technol., 1999, 42(2):31~41
[2] Burning J H. Optical lithography below 100nm. Solid State Technol., 1998, 41(11):59~67
[3] Vanden M A B, Jasper H, Slonaker S D et al.. Step-and-scan and step-and-repeat: a technology comparison. Proc. SPIE, 1996, 2726: 734~753
[4] Levenson M D, Ebihara T, Yamachika M. SCAA mask exposures and Phase Phirst designs for 100 nm and below. Proc. SPIE, 2001, 4346: 817~826
[5] Vandenberghe G, Kim Young-Chang, Delvaux C et al.. ArF lithography options for 100-nm technologies. Proc. SPIE, 2001, 4346: 179~190
[6] Linnovation. New l/NA scaling equations for resolution and depth-of-focus. Proc. SPIE, 2000, 4000: 759~764
[7] Nakao S, Itoh J, Nakae A et al.. Extension of KrF lithography to sub-50-nm pattern formation. Proc. SPIE, 2000, 4000: 358~365
[8] Leebrick D H. Focus considerations with high numerical aperture widefield lenses. Proc. SPIE, 1991, 1463: 275~280
[9] Mayer H E, Loebach E W. An advanced waferstepper for sub-micron fabrication. Proc. SPIE, 1987, 811: 149~159
[10] Suwa K, Ushida K. The optica stepper with a high numerical aperture i-line lens and a field-by-field leveling system. Proc.SPIE, 1988, 922: 270~276
[11] Uehara M, Sudo T, Kanatani F. Horizontal position detecting device[P]. United States, 4558949
[12] Suzuki K, Wakamoto S, Nishi K. KrF step and scan exposure system using higher NA projection lens. Proc. SPIE, 1996, 2726: 767~779
[13] Hagiwara T, Hamatani M, Tashiro H. Wafer edge-shot algorithm for wafer scanners. Proc. SPIE, 2002, 4691: 790~801
[14] Mori S. Higher NA ArF scanning exposure tool on new platform for further 100nm technology node. Proc. SPIE, 2001, 4346:651~658
[15] Suzuki A, Yabu S, Ookubo M. Intelligent optical system of a new stepper. Proc. SPIE, 1987, 772: 58~65
[16] Kawashima H, Suzuki A. Method and apparatus for precisely detection surface position of a patterned wafer. United States, 5118957
[17] Yamada Y, Uzawa S. Surface position detecting method and scanning exposure method using the same. United States, 6081614
[18] Deguchi N, Uzawa S. 150nm generation lithography equipment. Proc. SPIE, 1999, 3679: 464~472
[19] Iwamoto K, Sakai F. New scanners for the 100nm era. Proc.SPIE, 2001, 4346:621~633
[20] van der Werf J E, Biesterbos J W M. Optical imaging arrangement comprising an opto-electronic focusing-error detection system. United States, 4866262
[21] Wittekoek S, Vanden Brink M, Linders H et al.. Deep UV wafer stepper with through the lens wafer to reticle alignment. Proc. SPIE, 1990, 1264: 534~547
[22] van der Werf J E. Optical focus and level sensor for wafer steppers. J. Vac. Sci. Technol. B, 1992,(10):735~740
[23] van den Brink M A, Stoeldraijer J M D, Linders H F D. Overlay and field by field leveling in wafer steppers using an advanced metrology system. Proc. SPIE, 1992, 1673: 330~344
[24] Vleeming B, Heskamp B, Bakker H et al.. ArF step & scan system with 0.75 NA for the 0.10μm node. Proc. SPIE, 2001, 4346: 634~650
[25] Kim D H, Jang W I, Choi B Y et al.. Focusing and leveling system using PSDs for the wafer steppers. Proc.SPIE, 1994, 2197: 997~1003
[26] kim D H, Nam B H, Lee K H et al.. Probe beam Scan type auto-focus system using position sensing detector for sub-half micron lithography tools. Proc. SPIE, 1996, 2726: 876~885
[27] Oshida Y, Tanaka M, Tanimoto T. Chip leveling and focusing with laser interferometry. Proc. SPIE, 1990, 1264: 244~251
[28] Watanabe M, Oshida Y, Nakayama Y et al.. Focusing and leveling based on wafer surface profile detection with interferometry for optical lithography. Proc. SPIE, 1994, 2197: 980~989
[29] 胡 凇, 姚汉明, 张 津 等. 0.35μm投影光刻机的逐场调平技术和套刻步进模型. 光电工程, 1998, 25: 42~46
曾爱军, 王向朝, 徐德衍. 投影光刻机调焦调平传感技术的研究进展[J]. 激光与光电子学进展, 2004, 41(7): 24. 曾爱军, 王向朝, 徐德衍. Progress in Focus and Level Sensor for Projection Lithography System[J]. Laser & Optoelectronics Progress, 2004, 41(7): 24.