End-Hall与APS离子源辅助沉积制备的薄膜特性

利用离子束辅助沉积(IAD)技术制备了单层HfO2薄膜，离子源分别为End-Hall与APS离子源。采用Lambda900分光光度计、可变角光谱椭圆偏振仪（V-VASE）、X射线衍射仪(XRD)、扫描电子显微镜（SEM）、ZYGO干涉仪和激光量热计测试了薄膜的透射光谱、光学常数、晶体结构、表面形貌和吸收（1064 nm）。实验结果表明，薄膜特性与辅助离子源及起始膜料有着密切的关系。End-Hall离子源辅助沉积制备的薄膜出现轻微的折射率不均匀性。两种离子源辅助沉积制备的薄膜折射率均较高，吸收损耗小，薄膜均为单斜晶相。不同离子源辅助沉积条件下，利用金属Hf为起始膜料制备的薄膜表面平整度较好，其均方根粗糙度和总积分散射均相对较小。与End-Hall离子源相比，APS离子源辅助沉积制备的薄膜吸收相对较小。

Abstract

HfO2 thin films have been deposited by ion assisted deposition (IAD) with End-Hall and APS ion source respectively. Comprehensive characterization of these films such as transmittance spectra, optical constants, crystal structures, surface topography and absorption (1064 nm) have been studied via Lambda 900 spectrophotometer, variable angle spectroscopic ellipsometry (V-VASE), X-ray diffraction (XRD), scanning electron microscopy (SEM), ZYGO interferometer, and laser calorimeter. The results show that thin film properties have a close relationship with ion source and starting material. The films deposited with End-Hall ion source presents slightly inhomogeneous. These films made with End-Hall and APS ion sources respectively show high refractive index and low absorption loss, and the crystal structures of these films are monoclinic. Under deposition with different ion sources, the films prepared with hafnium as a starting material show even surface, low root mean square roughness and total integrated scattering. Compared with End-Hall ion source, the films deposited with APS ion source show lower absorption.

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艾万君, 熊胜明. End-Hall与APS离子源辅助沉积制备的薄膜特性[J]. 中国激光, 2011, 38(11): 1107001. Ai Wanjun, Xiong Shengming. Properties of Thin Films Prepared with End-Hall and APS Ion Assisted Deposition[J]. Chinese Journal of Lasers, 2011, 38(11): 1107001.

End-Hall与APS离子源辅助沉积制备的薄膜特性

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