[1] 马艳,何军,谢福增.980 nm 单模运转未镀增透膜光纤光栅激光器[J].光学学报, 2004,24(6):821～824

    Ma Yan, He Jun, Xie Fuzeng. 980 nm non-anti-reflection-coated fiber grating laser for single-longitudinal mode operation[J]. Acta Optica Sinica, 2004, 24(6):821～824

[2] . E. Plano, J. S. Major, D. F. Welch et al.. High power 875 nm Al-free laser diode[J]. IEEE Photon. Technol. Lett., 1994, 6(4): 465-467.

[3] . Diaz, K.Mobarhan, E.Kolev et al.. InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodesgrown by MOCVD[J]. IEEE Photon. Technol. Lett., 1994, 6(2): 132-134.

[4] 李忠辉, 王玉霞, 王玲 等. 850 nm有源区无铝高功率SCH-SQW激光器[J]. 中国激光, 2002, A29(1):5～6

    Li Zhonghui, Wang Yuxia, Wang Ling et al.. 850 nm Al-free active-region high power SCH-SQW laser[J]. Chinese J. Lasers, 2002, A29(1): 5～6

[5] 杨进华, 任大翠, 张剑家 等.InGaAsP/GaAs单量子阱半导体激光器光学特性的研究[J].中国激光,2000, A27(8)：687～690

    Yang Jinhua, Ren Dacui, Zhang Jianjia et al.. Study on optical characteristics of InGaAsP/GaAs SQW lasers[J].Chinese J. Lasers, 2000, A27(8)：687～690

[6] 宋海鹏, 温继敏, 曾雄文 等. 测量激光器结温的脉冲注入法研究[J].中国激光, 2005, 32(3): 407～410

    Song Haipeng, Wen Jimin, Zeng Xiongwen et al.. Research of pulse injection method for measuring LD chip temperature[J]. Chinese J. Lasers, 2005, 32(3): 407～410

[7] 仲莉, 王俊,冯小明 等. 808 nm大功率无铝有源区非对称波导结构激光器[J].中国激光, 2007,34(8): 1037～1042

    Zhong Li, Wang Jun, Feng Xiaoming et al.. 808 nm high-power lasers with Al-free active region with asymmetric waveguide structure[J]. Chinese J. Lasers, 2007,34(8):1037～1042

[8] . Bhattacharya, L.J.Maws, S. Nayak et al.. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodesgrown by metalorganic chemical vapor deposition on GaAs substrates[J]. Appl. Phys. Lett., 1996, 68(16): 2240-2242.

[9] . Zhang, A.Ovtchinnikov, J.Nappi et al.. Far-field, efficiency and loss of 980 nm InGaAs/GalnAsP/GalnP SCH quantum well[J]. Electron. Lett., 1997, 33(6): 489-491.

[10] . C.Vail, R.F.Nabiev, C. J. Chang-Hasnain.Temperature dependence of light-current characteristics of 0.98-μm Al-free strained-quantum-well lasers[J]. IEEE Photon. Technol. Lett., 1994, 6(11): 1303-1305.

[11] . . State-of-the-art aluminum-free 980-nm laser diodes[J]. J. Lightwave Technol., 1996, 14(10): 2356-2361.

[12] Yongkun Sin, Brendan Foran, Nathan Presser et al.. Reliability and failure mode investigation of high power multi-mode InGaAs strained quantum well single emitters[C]. SPIE, 2007,6456:645605

[13] 罗丹, 郭伟玲, 徐晨 等. 半导体激光器结温测试研究[J].半导体光电, 2007,28(2):183～190

    Luo Dan, Guo Weiling, Xu Chen et al.. Junction temperature measurement of semiconductor laser diode[J].Semiconductor Optoelectronics,2007,28(2):183～190

[14] 薄报学,高欣,乔忠良 等.大功率体光栅外腔半导体激光器的输出特性[J].中国激光,2008,35(4):501～504

    Bo Baoxue,Gao Xin,Qiao Zhongliang et al.. Characteristics of high power volume-Bragg-grating external cavity semiconductor lasers[J].Chinese J. Lasers, 2008,35(4):501～504

[15] . Sagawa, T. Toyonaka, K. Hiramoto et al.. High-power highly-reliable operation of 0.98-μm InGaAs-InGaP strain-compensated single-quantum-well lasers with tensile-strained InGaAsP barriers[J]. IEEE J. Quantum Electron., 1995, 31(2): 189-195.

[16] . Asonen, A. Ovtchinnikov, G. Zhang et al.. Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers[J]. IEEE J. Quantum Electron., 1994, 30(2): 415-425.

[17] . Ohkubo, T. Ijichi, A. Iketani et al.. 980-nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasers[J]. IEEE J. Quantum Electron., 1994, 30(2): 408-414.

[18] . J. Mawst, A. Bhattacharya, M. Nesnidal et al.. High CW output power and 'wallplug' efficiency Al-free InGaAs/lnGaAsP/InGaP double quantum well diode lasers[J]. Electron. Lett., 1995, 37(14): 1153-1154.