AlN缓冲层对Si基GaN外延薄膜性质的影响
陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 张宝顺. AlN缓冲层对Si基GaN外延薄膜性质的影响[J]. 发光学报, 2014, 35(6): 727.
CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHANG Bao-shun. Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate[J]. Chinese Journal of Luminescence, 2014, 35(6): 727.
[3] Christy D, Egawa T, Yano Y, et al. Uniform growth of AlGaN/GaN high electron mobility transistors on 200 mm silicon (111) substrate [J]. Appl. Phys. Exp., 2013, 6:026501-1-5.
[4] Armitage R, Yang Q, Feick H, et al. Lattice-matched HfN buffer layers for epitaxy of GaN on Si [J]. Appl. Phys. Lett., 2002, 81(8):1450-1452.
[5] Luo X H, Wang R M, Zhang X P, et al. Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si (111) wafer [J]. Micron., 2004, 35:475-480.
[6] Komiyama J, Abe Y, Suzuki S, et al. Suppression of crack generation in GaN epitaxy on Si using cubic SiC as intermediate layers [J]. Appl. Phys. Lett., 2006, 88(9):091901-1-3.
[7] Wang L S, Liu X L, Zan Y D, et al. Wurtzite GaN epitaxial growth on a Si (001) substrate using γ-Al2O3 as an intermediate layer [J]. Appl. Phys. Lett., 1998, 72(1):109-111.
[8] Strittmatter A, Krost A, Straburg M, et al. Low-pressure metal organic chemical vapor deposition of GaN on silicon (111) substrates using an AlAs nucleation layer [J]. Appl. Phys. Lett., 1999, 74(9):1242-1244.
[9] Yang J W, Sun C J, Chen Q, et al. High quality GaN-InGaN heterostructures grown on (111) silicon [J]. Appl. Phys. Lett., 1996, 69(23):3566-3568.
[10] Drechsel P, Stauss P, Bergbauer W, et al. Impact of buffer growth on crystalline quality of GaN grown on Si (111) substrates [J]. Phys. Stat. Sol.(a), 2012, 209(3):427-430.
[11] Xiong J J, Tang J J, Liang T, et al. Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si (111) [J]. Appl. Surf. Sci., 2010, 257:1161-1165.
[12] Zhao D G, Xu S J, Xie M H, et al. Stress and its effect on optical properties of GaN epilayers grown on Si (111), 6H-SiC (0001), and c-plane sapphire [J]. Appl. Phys. Lett., 2003, 83(4):677-679.
[13] Luo W J, Wang X L, Guo L C, et al. Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si (111) by MOCVD [J]. Microelectron. J., 2008, 39:1710-1713.
[14] Arslan E, Ozturk M K, Teke A, et al. Buffer optimization for crack-free GaN epitaxial layers grown on Si (111) substrate by MOCVD [J]. J. Phys. D: Appl. Phys., 2008, 41(15):155317-1-5.
[15] Zhang B S, Wu M, Shen X M, et al. Influence of high-temperature AlN buffer thickness on the properties of GaN grown on Si (111) [J]. J. Cryst. Growth, 2003, 258:34-40.
[16] Marchand H, Zhao L, Zhang N, et al. Metalorganic chemical vapor deposition of GaN on Si (111): Stress control and application to field-effect transistors [J]. Appl. Phys. Lett., 2001, 89(12):7846-7851.
陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 张宝顺. AlN缓冲层对Si基GaN外延薄膜性质的影响[J]. 发光学报, 2014, 35(6): 727. CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHANG Bao-shun. Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate[J]. Chinese Journal of Luminescence, 2014, 35(6): 727.