发光学报, 2014, 35 (6): 727, 网络出版: 2014-06-10  

AlN缓冲层对Si基GaN外延薄膜性质的影响

Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate
作者单位
1 北京工业大学电子信息与控制工程学院 光电子技术省部共建教育部重点实验室, 北京100124
2 中国科学院 苏州纳米技术与纳米仿生研究所, 江苏 苏州215123
引用该论文

陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 张宝顺. AlN缓冲层对Si基GaN外延薄膜性质的影响[J]. 发光学报, 2014, 35(6): 727.

CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHANG Bao-shun. Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate[J]. Chinese Journal of Luminescence, 2014, 35(6): 727.

参考文献

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[8] Strittmatter A, Krost A, Straburg M, et al. Low-pressure metal organic chemical vapor deposition of GaN on silicon (111) substrates using an AlAs nucleation layer [J]. Appl. Phys. Lett., 1999, 74(9):1242-1244.

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陈翔, 邢艳辉, 韩军, 霍文娟, 钟林健, 崔明, 范亚明, 张宝顺. AlN缓冲层对Si基GaN外延薄膜性质的影响[J]. 发光学报, 2014, 35(6): 727. CHEN Xiang, XING Yan-hui, HAN Jun, HUO Wen-juan, ZHONG Lin-jian, CUI Ming, FAN Ya-ming, ZHANG Bao-shun. Influence of AlN Buffer Layer on Properties of GaN Epitaxial Film Grown on Si Substrate[J]. Chinese Journal of Luminescence, 2014, 35(6): 727.

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