三代像增强器透射式GaAs阴极光电发射稳定性研究
徐江涛, 程耀进, 刘峰, 李敏, 刘蓓蓓. 三代像增强器透射式GaAs阴极光电发射稳定性研究[J]. 应用光学, 2013, 34(3): 489.
XU Jiang-tao, CHENG Yao-jin, LIU Feng, LI Min, LIU Bei-bei. Stability of transmission GaAs cathode photoemission of 3rd generation image intensifier[J]. Journal of Applied Optics, 2013, 34(3): 489.
[1] 王军胜.三代微光夜视技术发展述评[C].西安:第二〇五研究,1988.
WAN Jun-sheng.Third generation low-light-level technology development[C].Xian:No.205 Institute,1988.(in Chinese)
[2] 陶兆民.与玻璃粘接的GaAs-GaAlAs透射式光电阴极[J].应用光学,1980(1): 73-74.
TAO Zhao-min.Transmision photocathode of GaAs-AlGaAs and glass adhesion[J].Journal of Applied Optics, 1980(1):73-74. (in Chinese with an English abstract)
[3] 陶兆民.宽光谱透射式GaAs光电阴极[J].应用光学,1980(1):77-82.
TAO Zhao-min.GaAs Photocathode of Transmision for width spectrum[J].Journal of Applied Optics, 1980(1):77-82. (in Chinese with an English abstract)
[4] 徐江涛.三代微光像增强器GaAs负电子亲合势光电阴极稳定性研究[J].应用光学,1999,20(2):6-9.
XU Jiang tao.Resear on stubillty of GaAs NEA photocathode of generation Ⅲ image intensifiers[J]. Journal of Applied Optics,1999, 20(2):6-9. (in Chinese with an English abstract)
[5] 徐江涛.透射式GaAs光电阴极激活技术研究[J].应用光学,2000,21(4):5-7.
[6] 徐江涛.真空残气对GaAs阴极发射性能的影响[J].应用光学,2003,24(2):13-15.
[7] 田民波,刘德令.薄膜科学与技术手册(上册)[M].北京:机械工业出版社,1991.
TIAN Min-bo,LIU De-ling.Handook of film scince and Techonlogy [M].Beijing:Machine Industry Press, 1991.(in Chiness)
[8] 徐江涛.GaAs-玻璃粘接阴极组件热辐射放气成分的质谱分析[J].应用光学,2009,30(2):296-299.
[9] 邹继军,张益军,杨智,等.GaAs真空电子源衰减模型的研究[J].物理学报,2011,60(1):017901-5.
ZOU Ji-jun,ZHANG Yi-jun, YANG Zhi,et al. Degradation model of GaAs vacuum electron sources[J]. Acta Physica Sinica, 2011,60(1):017901-5. (in Chinese with an English abstract)
徐江涛, 程耀进, 刘峰, 李敏, 刘蓓蓓. 三代像增强器透射式GaAs阴极光电发射稳定性研究[J]. 应用光学, 2013, 34(3): 489. XU Jiang-tao, CHENG Yao-jin, LIU Feng, LI Min, LIU Bei-bei. Stability of transmission GaAs cathode photoemission of 3rd generation image intensifier[J]. Journal of Applied Optics, 2013, 34(3): 489.