应用光学, 2013, 34 (3): 489, 网络出版: 2013-10-23  

三代像增强器透射式GaAs阴极光电发射稳定性研究

Stability of transmission GaAs cathode photoemission of 3rd generation image intensifier
作者单位
北方夜视科技集团有限公司 微光夜视技术重点实验室,陕西 西安 710119
摘要
为了解决三代像增强器管内阴极灵敏度下降问题,用质谱计对激活工艺过程进行质量检测,并确定了激活工艺参数,通过对阴极原子级洁净表面获得和激活铯、氧提纯工艺参数优化研究,对制备的透射式GaAs阴极光电发射稳定性进行在线试验,结果表明:在10-9 Pa真空环境中,优化工艺激活的光电阴灵敏度(1 500 μA/lm)稳定,而且500 h不下降,铟封到管内的阴极灵敏度下降与真空度降低和有害气体污染有关。
Abstract
In order to find the reason of sensitivity degradation in tube body of the third generation low-light-level (LLL) image intensifier, on-line quality detection was carried out by using mass spectrometer and activation process parameters were determined. The acquisition of the cathode atom clean surface, high pure cesium and oxygen source were studied. The online stability for transmission cathode photoemission of GaAs was measured. Results show that the sensitivity (1 500 μA/lm) is stable in ultra-high vacuum pressure 10-9 Pa in continuous time of 500 hour. Sensitivity degradation is in connection with the vacuum loss and harmful gas pollution.
参考文献

[1] 王军胜.三代微光夜视技术发展述评[C].西安:第二〇五研究,1988.

    WAN Jun-sheng.Third generation low-light-level technology development[C].Xian:No.205 Institute,1988.(in Chinese)

[2] 陶兆民.与玻璃粘接的GaAs-GaAlAs透射式光电阴极[J].应用光学,1980(1): 73-74.

    TAO Zhao-min.Transmision photocathode of GaAs-AlGaAs and glass adhesion[J].Journal of Applied Optics, 1980(1):73-74. (in Chinese with an English abstract)

[3] 陶兆民.宽光谱透射式GaAs光电阴极[J].应用光学,1980(1):77-82.

    TAO Zhao-min.GaAs Photocathode of Transmision for width spectrum[J].Journal of Applied Optics, 1980(1):77-82. (in Chinese with an English abstract)

[4] 徐江涛.三代微光像增强器GaAs负电子亲合势光电阴极稳定性研究[J].应用光学,1999,20(2):6-9.

    XU Jiang tao.Resear on stubillty of GaAs NEA photocathode of generation Ⅲ image intensifiers[J]. Journal of Applied Optics,1999, 20(2):6-9. (in Chinese with an English abstract)

[5] 徐江涛.透射式GaAs光电阴极激活技术研究[J].应用光学,2000,21(4):5-7.

    XU Jiang-tao. Resear on stubillty of transrnision GaAs cathocle[J]. Journal of Applied Optics,2000, 21(4):5-7. (in Chinese with an English abstract)

[6] 徐江涛.真空残气对GaAs阴极发射性能的影响[J].应用光学,2003,24(2):13-15.

    XU Jiang-tao.Effect of residual gas on emission property of gallium arsenide cathocle in vacuum[J].Journal of Applied Optics,2003,24(2):13-15. (in Chinese with an English abstract)

[7] 田民波,刘德令.薄膜科学与技术手册(上册)[M].北京:机械工业出版社,1991.

    TIAN Min-bo,LIU De-ling.Handook of film scince and Techonlogy [M].Beijing:Machine Industry Press, 1991.(in Chiness)

[8] 徐江涛.GaAs-玻璃粘接阴极组件热辐射放气成分的质谱分析[J].应用光学,2009,30(2):296-299.

    XU Jiang-tao.Mass spectrometric ahalysis for gas components haked from glass cementation cathode module[J].Jourmal of Applied Optics,2009,30(2):296-299.(in Chinese with an English abstract)

[9] 邹继军,张益军,杨智,等.GaAs真空电子源衰减模型的研究[J].物理学报,2011,60(1):017901-5.

    ZOU Ji-jun,ZHANG Yi-jun, YANG Zhi,et al. Degradation model of GaAs vacuum electron sources[J]. Acta Physica Sinica, 2011,60(1):017901-5. (in Chinese with an English abstract)

徐江涛, 程耀进, 刘峰, 李敏, 刘蓓蓓. 三代像增强器透射式GaAs阴极光电发射稳定性研究[J]. 应用光学, 2013, 34(3): 489. XU Jiang-tao, CHENG Yao-jin, LIU Feng, LI Min, LIU Bei-bei. Stability of transmission GaAs cathode photoemission of 3rd generation image intensifier[J]. Journal of Applied Optics, 2013, 34(3): 489.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!