红外与激光工程, 2016, 45 (10): 1021001, 网络出版: 2016-11-14  

多层GaN外延片表面热应力分布及影响因素

Surface thermal stress distribution and the influence factors of Sapphire/AlN/GaN epilayers
作者单位
1 微光夜视技术重点实验室, 陕西 西安 710065
2 西安工业大学 光电工程学院, 陕西 西安 710021
引用该论文

陈靖, 程宏昌, 吴玲玲, 冯刘, 苗壮. 多层GaN外延片表面热应力分布及影响因素[J]. 红外与激光工程, 2016, 45(10): 1021001.

Chen Jing, Cheng Hongchang, Wu Lingling, Feng Liu, Miao Zhuang. Surface thermal stress distribution and the influence factors of Sapphire/AlN/GaN epilayers[J]. Infrared and Laser Engineering, 2016, 45(10): 1021001.

参考文献

[1] Shahedipour F S, Ulmer M P. Efficient GaN photocathodes for low-level ultraviolet signal detection[J]. IEEE Journal of Quantum Electronics, 2002, 38(4): 333-335.

[2] Guo Xiangyang, Chang Benkang, Qiao Jianliang, et al. Comparison of stability of GaN and GaAs photocathode[J]. Infrared Technology, 2010, 32(2): 117-120. (in Chinese)

[3] Du Yujie, Chang Benkang, Fu Xiaoqian, et al. Effects of NEA GaN photocathode performance parameters on quantum efficiency[J]. Optik, 2012, 123(9): 800-803.

[4] Li Xiangyang, Xu Jingtong, Tang Yingwen, et al. GaN based ultraviolet detectors and its recent development[J]. Infrared and Laser Engineering, 2006, 35(03): 276-280. (in Chinese)

[5] Hsueh C H. Thermal stresses in elastic multilayer systems[J]. Thin Solid Films, 2002, 418(2): 182-188.

[6] Cao T, Zhang L, Xiao Z, et al. Enhancement and tenability of fano resonance in symmetric multilayer metamaterials at optical regime[J]. Journal of Physics D: Applied Physics, 2013, 46(39): 395103.

[7] Shao Shuying, Fan Zhengxiu, Fan Ruiying, et al. A review of study of stress in thin films [J]. Laser & Optronics Progress, 2005, 42(1): 22-27. (in Chinese)

[8] Chen Weilan. Research on stresses in optical films[D]. Hangzhou: Zhejiang University, 2008. (in Chinese)

[9] Kinosita K, Maki K, Nakamizo K, et al. Stress in vacuum deposited fims of silver[J]. Japanese Journal of Applied Physics, 1967, 6(1): 42-50.

[10] Liu Xing, Zhu Jiaqi, Han Jiecai. Thermal stresses in elastic multilayer systems[J]. Mechanics in Engineering, 2014, 36(4): 453-456. (in Chinese)

[11] Townsend P H, Barnett D M, Brunner T A. Elastic relationships in layered composite media with approximation for the case of thin films on a thick substrate[J]. Journal of Applied Physics, 1987, 62(11): 4438-4444.

[12] Li Ying′ai. Preparation and field emission characteristics of AIN thin films[D]. Changchun: Jilin University, 2004. (in Chinese)

[13] Xing Zhiggang. Study on micro-structure of GaN films epitaxially grown on patterned sapphire substrate[D]. Beijing: Institute of Physics CAS, 2007. (in Chinese)

[14] Wu Liangzhen, Tang Jieyu, Ma Yuanxin, et al. Simulation of thermal stress in SiO2 thin film[J]. Journal of South China Normal University(Natural Science Edition), 2009, 1(1): 52-55. (in Chinese)

陈靖, 程宏昌, 吴玲玲, 冯刘, 苗壮. 多层GaN外延片表面热应力分布及影响因素[J]. 红外与激光工程, 2016, 45(10): 1021001. Chen Jing, Cheng Hongchang, Wu Lingling, Feng Liu, Miao Zhuang. Surface thermal stress distribution and the influence factors of Sapphire/AlN/GaN epilayers[J]. Infrared and Laser Engineering, 2016, 45(10): 1021001.

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!