红外与毫米波学报, 2010, 29 (6): 415, 网络出版: 2010-12-13   

128×128短波/中波双色红外焦平面探测器

128×128 SW/MW TWO-COLOR HgCdTe IRFPAs
作者单位
1 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室, 上海200083
2 中国科学院研究生院, 北京100039
摘要
首次在国内报道了128×128面阵短波/中波(SW/MW)双色碲镉汞(HgCdTe)红外焦平面探测器(infrared focal plane arrays, IRFPAs)的研究成果.基于由采用分子束外延(MBE)和原位掺杂技术生长的p-p-P-N型碲镉汞(Hg1-xCdxTe)多层异质结材料, 通过B+注入、台面腐蚀、台面侧向钝化和爬坡金属化, 以及双色探测芯片与读出电路(Readout Integrated Circuit, ROIC)混成互连等工艺, 得到了128×128面阵双色焦平面探测器.通过湿化学腐蚀方法的优化, 将光敏元尺寸为(50×50)μm2的双色微台面探测器的占空比提高了一倍.该面阵双色红外焦平面探测器具有较好的均匀性和正常的光电特性.在液氮温度下, 二个波段的光电二极管截止波长λc分别为2.7μm和4.9μm, 对应的峰值探测率D*λp分别为1.42×1011cmHz1/2/W和2.15×1011 cmHz1/2/W.
Abstract
The results of 128×128 SW/MW two-color HgCdTe infrared focal plane arrays (IRFPAs) were presented. By B+-implantation, mesa-isolation etching, side-wall passivation, side-wall metallization and flip-chip hybridization with readout integrated circuit (ROIC),128×128 SW/MW two-color HgCdTe IRFPAs detector was fabricated from a four-layer p-p-P-N hetero-junction of Hg1-xCdxTe film grown by molecular beam epitaxy and in-situ doping techniques. The micro-mesa fill-factor of (50×50)μm2 two-color detector arrays was doubled by optimizing the wet-chemical etching process. The staring SW/MW two-color HgCdTe IRFPAs detector performed high uniformity and normal photo-electric properties. At liquid nitrogen temperature, the cut-off wavelengths of the two-color IRFPAs were 2.7μm and 4.9μm, respectively, and the peak detectivities (D*λp) were 1.42×1011cmHz1/2/W and 2.15×1011cmHz1/2/W respectively.
参考文献

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叶振华, 尹文婷, 黄建, 胡伟达, 陈路, 廖亲君, 陈洪雷, 林春, 胡晓宁, 丁瑞军, 何力. 128×128短波/中波双色红外焦平面探测器[J]. 红外与毫米波学报, 2010, 29(6): 415. YE Zhen-Hua, YIN Wen-Ting, HUANG Jian, HU Wei-Da, CHEN Lu, LIAO Qin-Jun, CHEN Hong-Lei, LIN Chun, HU Xiao-Ning, DING Rui-Jun, HE Li. 128×128 SW/MW TWO-COLOR HgCdTe IRFPAs[J]. Journal of Infrared and Millimeter Waves, 2010, 29(6): 415.

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