半导体光子学与技术, 2003, 9 (2): 75, 网络出版: 2011-08-11  

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers
作者单位
Microelectronics R&D Center, Chinese Academy of Sciences, Beijing 100029, CHN
基本信息
DOI: --
中图分类号: TN27;TN364.1
栏目:
项目基金: “Hundred s Personage Project” Foundation for Chinese Academy of Sciences
收稿日期: 2002-08-02
修改稿日期: 2002-09-05
网络出版日期: 2011-08-11
通讯作者:
备注: --

JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. 半导体光子学与技术, 2003, 9(2): 75. JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. Semiconductor Photonics and Technology, 2003, 9(2): 75.

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