半导体光子学与技术, 2003, 9 (2): 75, 网络出版: 2011-08-11  

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers
作者单位
Microelectronics R&D Center, Chinese Academy of Sciences, Beijing 100029, CHN
引用该论文

JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. 半导体光子学与技术, 2003, 9(2): 75.

JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. Semiconductor Photonics and Technology, 2003, 9(2): 75.

参考文献

[1] Fossum E R.CMOS image sensor: electronic camera-on-a-chip[J]. IEEE Trans.Electr.Dev.,1997, 44(10):1 689.

[2] Schanz M,Brockherde W,Hauschild R,et al.Smart CMOS image arrays[J]. IEEE Trans.Electr.Dev., 1997,44(10):1 699.

[3] Blanksby A J,Loinaz M J.Performance analysis of a color photogate image sensor[J]. IEEE Trans. Electr.Dev.,2000,47(1):55.

JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. 半导体光子学与技术, 2003, 9(2): 75. JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. Semiconductor Photonics and Technology, 2003, 9(2): 75.

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