半导体光子学与技术, 2003, 9 (2): 75, 网络出版: 2011-08-11  

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers

Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers
作者单位
Microelectronics R&D Center, Chinese Academy of Sciences, Beijing 100029, CHN
补充材料

JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. 半导体光子学与技术, 2003, 9(2): 75. JIN Xiang-liang, CHEN Jie, QIU Yu-lin. Simulation and Analysis of Photo-charge Transfer Characteristics of Bipolar Junction Photogate Transistor for CMOS Imagers[J]. Semiconductor Photonics and Technology, 2003, 9(2): 75.

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