半导体量子点集成有机发光二极管的光光转换器进展
[1] Tang C W, Vanslyke S A. Organic electro-luminescent diode[J]. Appl. Phys. Lett., 1987, 51(12): 913-915.
[2] Burroughes J H, Bradley D D C, Brown A R, et al. Light-emitting diodes based on conjugated polymers[J]. Nature, 1990, 347(6293): 539-541.
[3] Overton G. Infrared imaging OLED converts IR to visible: Night vision for your cell phone [J]. Laser Focus World, 2010, 46(7): 16-31.
[4] 杨宇, 王茺. 硅基低维红外探测薄膜材料的研究概况 [J].材料导报, 2009, 23(4): 5-12.
[5] Rokhinson L P, Tsui D C, Benton J L, et al. Infrared and photoluminece spectroscopy of p-doped self-assembled Ge dots on Si[J]. Appl. Phys. Lett., 1999, 75(16): 2413-2415.
[6] Peng Y H, Chen C C, Kuan C H, et al. Ge quantum dots sandwiched between two thick Si blocking layers to block the dark current and tune the responsivity spectrum[J]. Solid-State Electronics, 2003, 47(10): 1775-1780.
[7] 姬荣斌, 唐利斌, 张筱丹. 有机半导体探测器材料的研究展望 [J].红外技术, 2006, 28(1): 2-6.
[8] 王忆锋, 唐利斌, 岳清. 单层OLED器件模型的 MATLAB分析计算[J]. 红外技术, 2012, 34(6): 332-335.
[9] Liu H C, Li J, Wasilewski Z R, et al. Integrated quantum well intersub-band photodetector and light emitting diode[J]. Electronics Letters, 1995, 31(10): 832-833.
[10] Sandhu J S, Heberle A P, Alphenaar B W, et al. Near-infrared to visible up-conversion in a forward-biased Schottky diode with a p-doped channel[J]. Appl. Phys. Lett., 2000, 76(12): 1507-1509.
[11] Yang Y, Liu H C, Shen W Z, et al. GaAs-based near-infrared up-conversion device fabricated by wafer fusion[J]. Electronics letters, 2011, 47(6): 393-395.
[12] Lin S Y, Tseng C C, Lin W H, et al. Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode[J]. Appl. Phys. Lett., 2010, 96(12): 123503(1-3).
[13] Chikamatsu M, Ichino Y, Takada N, et al. Light up-conversion from near-infrared to blue using a photoresponsive organic light-emitting device[J]. Appl. Phys. Lett., 2002, 81(4): 769-771.
[14] Ban D, Han S, Lu Z H, et al. Near-infrared to visible light optical upconversion by direct tandem integration of organic light-emitting diode and inorganic photodetector[J]. Appl. Phys. Lett., 2007, 90(9): 093108(1-3).
[15] Chen J, Tao J, Ban D, et al. Hybrid organic/inorganic optical up-converter for pixel-less near-infrared imaging[J]. Adv. Mater., 2012, 24(23): 3138-3142.
[16] Chen J, Ban D, Helander M G, et al. Near-IR optical upconverter with integrated heterojunction phototransistor and organic light-emitting diode[J]. IEEE Phot. Technol. Lett., 2009, 21(19): 1447-1449.
[17] Chen J, Ban D, Helander M G, et al. Near-infrared inorganic/organic optical upconverter with an external power efficiency of >100%[J]. Adv. Mater., 2010, 22(43): 4900-4904.
[18] Chen J, Ban D, Feng X, et al. Enhanced efficiency in near-infrared inorganic/organic hybrid optical upconverter with an embedded mirror[J]. J. Appl. Phys., 2008, 103(10): 103112(1-5).
[19] Yan F, Sun X W. A plasmonically enhanced charge generation layer for tandem organic light emitting device[J]. Appl. Phys. Lett., 2013, 102(4): 043303(1-4).
[20] Wetzelaer G A H, Najafi A, Kist R J P, et al. Efficient electron injection from solution-processed cesium stearate interlayers in organic light-emitting diodes[J]. Appl. Phys. Lett., 2013, 102(5): 053301(1-4).
[21] Wang D, Yasui K, Ozawa M, et al. Hole injection enhancement by sparsely dispersed Au nanoparticles on indium tin oxide electrode in organic light emitting devices[J]. Appl. Phys. Lett., 2013, 102(2): 023302(1-3).
[22] Sasabe H, Toyota N, Nakanishi H, et al. 3,3′-bicarbazole-based host materials for high-efficiency blue phosphorescent OLEDs with extremely low driving voltage[J]. Adv. Mater., 2012, 24(24): 3212-3217.
[23] Xiao L, Chen Z, Qu B, et al. Recent progresses on materials for electrophosphorescent organic light-emitting devices[J]. Adv. Mater., 2011, 23(8): 926-952.
[24] Kim D Y, Choudhury K R, Lee J W, et al. PbSe nanocrystal-based infrared-to-visible up-conversion device[J]. Nano letters, 2011, 11(5): 2109-2113.
[25] Fenwick O, Sprafke J K, Binas J, et al. Linear and cyclic porphyrin hexamers as near-infrared emitters in organic light-emitting diodes[J]. Nano letters, 2011, 11(6): 2451-2456.
[26] 杨恢东, 侯信, 吴春亚, 等. 薄膜 a-Si PIN/OLED图像传感显示器的设计与模拟[J].半导体学报, 2002, 23(8): 846-851.
[27] 李娟, 吴春亚, 杨广华, 等. 微晶硅 PIN/OLED红外光上转换器件[J].半导体光电, 2004, 25(2): 101-104.
[28] 甄红楼, 熊大元, 周旭昌, 等. 红外 -近红外波长变换器件 p -QWIP-LED研究[J]. 中国科学 G辑(物理学 力学 天文学), 2006, 36(3): 327-336.
杨宇, 靳映霞, 王登科, 杨杰, 王茺, 吕正红. 半导体量子点集成有机发光二极管的光光转换器进展[J]. 红外技术, 2013, 35(10): 599. YANG Yu, JIN Ying-xia, WANG Deng-ke, YANG Jie, WANG Chong, LU Zheng-hong. Progress of Infrared Light-Visible Light Converter Integrated Semiconducting Quantum Dots with OLED[J]. Infrared Technology, 2013, 35(10): 599.
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