光电子快报(英文版), 2013, 9 (6): 449, Published Online: Oct. 12, 2017  

Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature

Author Affiliations
1 Tianjin Key Laboratory of Film Electronic and Communication Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
2 National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China
Abstract
Cu(In,Ga)Se2(CIGS) thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy (SEM). The orientation of CIGS thin films is identified by X-ray diffraction (XRD) and Raman spectrum, respectively. Through analyzing the film-forming mechanisms of two preparation processes, we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low temperature results in the CIGS thin films with the (220)/(204) preferred orientation, and the ordered vacancy compound (OVC) layer is formed on the surface of the film. This study has great significance to large-scale industrial production.
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ZHANG Jia-wei, XUE Yu-ming, LI Wei, ZHAO Yan-min, QIAO Zai-xiang. Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature[J]. 光电子快报(英文版), 2013, 9(6): 449.

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