半导体光电, 2017, 38 (4): 536, 网络出版: 2017-08-30  

肖特基势垒反向隧穿电流的计算模型与特征分析

Calculation Models and Feature Analysis of Schottky Barrier Reverse Tunneling Current
作者单位
1 南京信息工程大学1. 物理与光电工程学院
2 2. 电磁功能材料研究所, 南京 210044
引用该论文

雷勇, 饶伟锋, 苏静, 杨翠红. 肖特基势垒反向隧穿电流的计算模型与特征分析[J]. 半导体光电, 2017, 38(4): 536.

LEI Yong, RAO Weifeng, SU Jing, YANG Cuihong. Calculation Models and Feature Analysis of Schottky Barrier Reverse Tunneling Current[J]. Semiconductor Optoelectronics, 2017, 38(4): 536.

参考文献

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[8] Lei Y, Su J, Wu H Y, et al. On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases[J]. Chinese Phys. B, 2017, 26(2): 027105.

雷勇, 饶伟锋, 苏静, 杨翠红. 肖特基势垒反向隧穿电流的计算模型与特征分析[J]. 半导体光电, 2017, 38(4): 536. LEI Yong, RAO Weifeng, SU Jing, YANG Cuihong. Calculation Models and Feature Analysis of Schottky Barrier Reverse Tunneling Current[J]. Semiconductor Optoelectronics, 2017, 38(4): 536.

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