肖特基势垒反向隧穿电流的计算模型与特征分析
[1] Padovani F A, Stratton R. Field and thermionic-field emission in Schottky barriers[J]. Solid-State Electron., 1966, 9(7): 695-707.
[2] Hasegawa H, Oyama S. Mechanism of anomalous current transport in n-type GaN Schottky contacts[J]. J. of Vacuum Science & Technol. B, 2002, 20(4): 1647-1655.
[3] Huang L Q. Barrier in homogeneities of platinum contacts to 4H-SiC[J]. Superlattices and Microstructures, 2016, 100: 648-655.
[4] Goykhman I, Sassi U, Desiatov B, et al. On-chip integrated, silicon-graphene plasmonic Schottky photodetector with high responsivity and avalanche photogain[J]. Nano Lett., 2016, 16(5): 3005-3013.
[5] Lei Y, Lu H, Cao D S, et al. Reverse leakage mechanism of Schottky barrier diode fabricated on homoepitaxial GaN[J]. Solid-State Electron., 2013, 82: 63-66.
[6] Lu W, Wang L Q, Gu S Y, et al. Analysis of reverse leakage current and breakdown voltage in GaN and InGaN/GaN Schottky barriers[J]. IEEE Trans. on Electron Devices, 2011, 58(7): 1986-1994.
[7] Knap W, Alause H, Bluet J M, et al. The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface[J]. Solid State Commun., 1996, 99(3): 195-199.
[8] Lei Y, Su J, Wu H Y, et al. On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases[J]. Chinese Phys. B, 2017, 26(2): 027105.
雷勇, 饶伟锋, 苏静, 杨翠红. 肖特基势垒反向隧穿电流的计算模型与特征分析[J]. 半导体光电, 2017, 38(4): 536. LEI Yong, RAO Weifeng, SU Jing, YANG Cuihong. Calculation Models and Feature Analysis of Schottky Barrier Reverse Tunneling Current[J]. Semiconductor Optoelectronics, 2017, 38(4): 536.