硅基PbSe/BaF<sub>2</sub>/CaF<sub>2</sub>薄膜及其光电特性

采用分子束外延方法在Si(111)衬底上生长了PbSe/BaF₂/CaF₂薄膜,扫描电镜和X-光衍射分析显示,通过生长BaF₂/CaF₂缓冲层的方法,在Si(111)衬底上外延的PbSe薄膜晶体质量高,PbSe表面光亮,无开裂现象发生,X-光衍射峰峰宽窄(153arcs).外延生长的PbSe薄膜被应用于制作光电二极管,首次采用热蒸发金属铝膜在PbSe表面形成Al-PbSe肖特基结光电二极管,获得了比Pb-PbSe肖特基结更为稳定和理想的电流-电压特性曲线.

Abstract

PbSe films were grown on Si(111) by incorporation of BaF₂/CaF₂ buffers using molecular beam epitaxy. The measurements of both scanning electronic microscopy and high-resolution X-ray diffraction showed high crystalline quality of the PbSe films. The surface of PbSe was mirror-like and no cracks were observed. The full width at half-maximum of PbSe diffraction peak was only 153 arcsec. The epitaxial PbSe films were used to fabricate photodiodes. For the first time, metallic aluminum was used to form Al-PbSe Schottky diodes, which demonstrated better and more stable current-voltage characteristics than that obtained from Pb-PbSe Schottky diodes.

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金进生, 吴惠桢, 常勇, 寿翔, X.M.Fang, P.J.Mc Cann. 硅基PbSe/BaF₂/CaF₂薄膜及其光电特性[J]. 红外与毫米波学报, 2001, 20(2): 154. 金进生, 吴惠桢, 常勇, 寿翔, X.M.Fang, P.J.Mc Cann. PHOTOELECTRIC PROPERTIES OF PbSe/BaF₂/CaF₂ FILMS ON Si(111)[J]. Journal of Infrared and Millimeter Waves, 2001, 20(2): 154.

硅基PbSe/BaF₂/CaF₂薄膜及其光电特性

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