红外与毫米波学报, 2015, 34 (4): 432, 网络出版: 2015-10-22
Au掺杂碲镉汞气相外延生长及电学性能
Growth of Au-doped Hg1-xCdxTe epitaxial crystals and its Raman spectrum
Hg1-xCdxTe晶体 磁输运 迁移率谱 二次离子质谱 Hg1-xCdx Te crystal magneto-transport mobility spectrum secondary ion mass spectroscopy (SIMS)
摘要
采用气相外延技术生长Au掺杂的Hg1-xCdxTe薄膜材料, 利用范德堡法对薄膜材料进行电学性能表征.通过变温霍尔测量, 分析了常规Au掺杂p型薄膜的霍尔系数和霍尔迁移率随温度的变化, 利用二次离子质谱(SIMS)分析薄膜中Au的纵向分布趋势.讨论了三种反常p型薄膜的霍尔系数和霍尔迁移率随温度的变化.通过变磁场霍尔测量, 分析了具有反型层Hg1-xCdxTe薄膜的迁移率谱, 证实了由于表面电子、体电子以及体空穴混合导电造成的反常霍尔性能.
Abstract
Au-doped Hg1-xCdx Te epitaxial layers were grown by vapor phase epitaxial method. The electrical properties of Hg1-xCdxTe epitaxial layers were investigated by Hall measurement. Profile of Au in Hg1-xCdx Te epitaxial layers was revealed by Secondary ion mass spectroscopy (SIMS) method. Hall coefficient and Hall mobility of three abnormal P type samples were discussed. Moreover, variable-magnetic-field Hall measurement was performed on Hg1-xCdx Te with antitype epitaxial layer. Mobility spectrum analysis was employed to verify surface electrons, bulk electrons and bulk holes mixed conduction in Hg1-xCdx Te epitaxial layers.
王仍, 焦翠灵, 徐国庆, 张莉萍, 张可锋, 陆液, 杜云辰, 邵秀华, 林杏潮, 李向阳. Au掺杂碲镉汞气相外延生长及电学性能[J]. 红外与毫米波学报, 2015, 34(4): 432. WANG Reng, JIAO Cui-Ling, XU Guo-Qing, ZHAGN Li-Ping, ZHANG Ke-Feng, YE Lu, DU Yun-Chen, SHAO Xiu-Hua, LIN Xing-Cao, LI Xiang-Yang. Growth of Au-doped Hg1-xCdxTe epitaxial crystals and its Raman spectrum[J]. Journal of Infrared and Millimeter Waves, 2015, 34(4): 432.
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