中国激光, 1997, 24 (9): 803, 网络出版: 2006-10-31
脉冲激光辐照下半导体薄膜中温度场的计算
Calculation of the Temperature Distribution inside Semiconductor Films Irradiated by a Pulsed Laser
激光辐照 温度场 晶化 非晶硅 多量子阱 laser irradiation temperature distribution crystallization amorphous silicon multi quantum well
摘要
利用理论模型求得了脉冲激光辐照半导体薄膜材料的温度场解析解。结合KrF准分子脉冲激光对淀积在熔凝石英衬底上的a-SiH薄膜以及a-Si:H/a-SiNx:H多量子阱结构材料的热退火处理,分析了膜厚、激光能量密度以及a-Si:H/a-SiNx:H多量子阱结构材料中的子层厚度比对温度场性质及a-Si:H薄膜的晶化效果的影响。
Abstract
Temperature distributions induced by laser pulses in an absorptive semiconductor film deposited on a non absorptive substrate have been calculated. For cases of a Si:H film and a Si:H/ a SiN x: H multi quantum well structure on the quartz substrates irradiated by the KrF pulsed excimer laser, we analyzed the effect of film thickness, laser energy density and the ratio of sublayers′ thicknesses of a Si:H/ a SiN x: H MQW structure on the temperature distribution and crystallization of a-Si:H and a-Si:H/a-SiNx:H MQW structure.
高翔, 黄信凡, 陈坤基. 脉冲激光辐照下半导体薄膜中温度场的计算[J]. 中国激光, 1997, 24(9): 803. 高翔, 黄信凡, 陈坤基. Calculation of the Temperature Distribution inside Semiconductor Films Irradiated by a Pulsed Laser[J]. Chinese Journal of Lasers, 1997, 24(9): 803.
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