发光学报, 2015, 36 (4): 466, 网络出版: 2015-04-14
Si(111)衬底切偏角对GaN基LED外延膜的影响
Influence of Substrate Miscut on Properties of GaN-based LED Films Grown on Si(111)
引用该论文
武芹, 全知觉, 王立, 刘文, 张建立, 江风益. Si(111)衬底切偏角对GaN基LED外延膜的影响[J]. 发光学报, 2015, 36(4): 466.
WU Qin, QUAN Zhi-jue, WANG Li, LIU Wen, ZHANG Jian-li, JIANG Feng-yi. Influence of Substrate Miscut on Properties of GaN-based LED Films Grown on Si(111)[J]. Chinese Journal of Luminescence, 2015, 36(4): 466.
武芹, 全知觉, 王立, 刘文, 张建立, 江风益. Si(111)衬底切偏角对GaN基LED外延膜的影响[J]. 发光学报, 2015, 36(4): 466. WU Qin, QUAN Zhi-jue, WANG Li, LIU Wen, ZHANG Jian-li, JIANG Feng-yi. Influence of Substrate Miscut on Properties of GaN-based LED Films Grown on Si(111)[J]. Chinese Journal of Luminescence, 2015, 36(4): 466.
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